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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IXFX160N30T	RFQ VIEW	PDF RFQ	2,941 In-stock	IXYS	MOSFET N-CH 300V 160A PLUS247		GigaMOS™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	PLUS247™-3	1390W (Tc)	N-Channel	-	300V	160A (Tc)	19 mOhm @ 60A, 10V	5V @ 8mA	335nC @ 10V	28000pF @ 25V	10V	±20V
	IXFK180N25T	RFQ VIEW	PDF RFQ	2,459 In-stock	IXYS	MOSFET N-CH 250V 180A TO-264		GigaMOS™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264AA (IXFK)	1390W (Tc)	N-Channel	-	250V	180A (Tc)	12.9 mOhm @ 60A, 10V	5V @ 8mA	345nC @ 10V	28000pF @ 25V	10V	±20V
	IXFK160N30T	RFQ VIEW	PDF RFQ	3,617 In-stock	IXYS	MOSFET N-CH 300V 160A TO-264		GigaMOS™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264AA (IXFK)	1390W (Tc)	N-Channel	-	300V	160A (Tc)	19 mOhm @ 60A, 10V	5V @ 8mA	335nC @ 10V	28000pF @ 25V	10V	±20V
	IXFX180N25T	RFQ VIEW	PDF RFQ	3,730 In-stock	IXYS	MOSFET N-CH 250V 180A PLUS247		GigaMOS™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	PLUS247™-3	1390W (Tc)	N-Channel	-	250V	180A (Tc)	12.9 mOhm @ 60A, 10V	5V @ 8mA	345nC @ 10V	28000pF @ 25V	10V	±20V

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