Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SPB18P06P
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3,460
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Infineon Technologies MOSFET P-CH 60V 18.7A D2PAK SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 81.1W (Ta) P-Channel - 60V 18.7A (Ta) 130 mOhm @ 13.2A, 10V 4V @ 1mA 28nC @ 10V 860pF @ 25V 10V ±20V
SPP18P06PHKSA1
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RFQ
3,768
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Infineon Technologies MOSFET P-CH 60V 18.7A TO-220AB SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 81.1W (Ta) P-Channel - 60V 18.7A (Ta) 130 mOhm @ 13.2A, 10V 4V @ 1mA 28nC @ 10V 860pF @ 25V 10V ±20V
SPP18P06PHXKSA1
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RFQ
1,573
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Infineon Technologies MOSFET P-CH 60V 18.7A TO-220 SIPMOS® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 81.1W (Ta) P-Channel - 60V 18.7A (Ta) 130 mOhm @ 13.2A, 10V 4V @ 1mA 28nC @ 10V 860pF @ 25V 10V ±20V
SPB18P06PGATMA1
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RFQ
2,871
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Infineon Technologies MOSFET P-CH 60V 18.7A TO-263 SIPMOS® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 81.1W (Ta) P-Channel - 60V 18.7A (Ta) 130 mOhm @ 13.2A, 10V 4V @ 1mA 28nC @ 10V 860pF @ 25V 10V ±20V
SPB18P06PGATMA1
RFQ
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RFQ
3,598
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Infineon Technologies MOSFET P-CH 60V 18.7A TO-263 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 81.1W (Ta) P-Channel - 60V 18.7A (Ta) 130 mOhm @ 13.2A, 10V 4V @ 1mA 28nC @ 10V 860pF @ 25V 10V ±20V
SPB18P06PGATMA1
RFQ
VIEW
RFQ
3,276
In-stock
Infineon Technologies MOSFET P-CH 60V 18.7A TO-263 SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 81.1W (Ta) P-Channel - 60V 18.7A (Ta) 130 mOhm @ 13.2A, 10V 4V @ 1mA 28nC @ 10V 860pF @ 25V 10V ±20V