- Manufacture :
- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
13 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,415
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 31A DPAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 3W (Ta), 110W (Tc) | N-Channel | - | 100V | 31A (Tc) | 39 mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | 1690pF @ 25V | 10V | ±20V | |||
;;3.jpg)
|
VIEW |
3,670
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 31A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 3W (Ta), 110W (Tc) | N-Channel | - | 100V | 31A (Tc) | 39 mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | 1690pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,592
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 31A DPAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 3W (Ta), 110W (Tc) | N-Channel | - | 100V | 31A (Tc) | 39 mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | 1690pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,678
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 31A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 3W (Ta), 110W (Tc) | N-Channel | - | 100V | 31A (Tc) | 39 mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | 1690pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,987
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 31A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 3W (Ta), 110W (Tc) | N-Channel | - | 100V | 31A (Tc) | 39 mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | 1690pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,815
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 6A POWERFLAT | MDmesh™ II | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-PowerFlat™ HV | PowerFlat™ (8x8) HV | 3W (Ta), 110W (Tc) | N-Channel | - | 600V | 2.1A (Ta), 12A (Tc) | 310 mOhm @ 6A, 10V | 4V @ 250µA | 35nC @ 10V | 1000pF @ 50V | 10V | ±30V | |||
|
|
VIEW |
3,530
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 6A POWERFLAT | MDmesh™ II | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-PowerFlat™ HV | PowerFlat™ (8x8) HV | 3W (Ta), 110W (Tc) | N-Channel | - | 600V | 2.1A (Ta), 12A (Tc) | 310 mOhm @ 6A, 10V | 4V @ 250µA | 35nC @ 10V | 1000pF @ 50V | 10V | ±30V | |||
|
|
VIEW |
3,073
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 6A POWERFLAT | MDmesh™ II | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-PowerFlat™ HV | PowerFlat™ (8x8) HV | 3W (Ta), 110W (Tc) | N-Channel | - | 600V | 2.1A (Ta), 12A (Tc) | 310 mOhm @ 6A, 10V | 4V @ 250µA | 35nC @ 10V | 1000pF @ 50V | 10V | ±30V | |||
|
|
VIEW |
3,324
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 31A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 3W (Ta), 110W (Tc) | N-Channel | - | 100V | 31A (Tc) | 39 mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | 1690pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,214
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 31A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 3W (Ta), 110W (Tc) | N-Channel | - | 100V | 31A (Tc) | 39 mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | 1690pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,733
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 31A DPAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 3W (Ta), 110W (Tc) | N-Channel | - | 100V | 31A (Tc) | 39 mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | 1690pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,553
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 31A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 3W (Ta), 110W (Tc) | N-Channel | - | 100V | 31A (Tc) | 39 mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | 1690pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
678
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 31A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 3W (Ta), 110W (Tc) | N-Channel | - | 100V | 31A (Tc) | 39 mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | 1690pF @ 25V | 10V | ±20V | |||
