Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI2301CDS-T1-GE3
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Vishay Siliconix MOSFET P-CH 20V 3.1A SOT23-3 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 860mW (Ta), 1.6W (Tc) P-Channel - 20V 3.1A (Tc) 112 mOhm @ 2.8A, 4.5V 1V @ 250µA 10nC @ 4.5V 405pF @ 10V 2.5V, 4.5V ±8V
SI2301CDS-T1-GE3
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Vishay Siliconix MOSFET P-CH 20V 3.1A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 860mW (Ta), 1.6W (Tc) P-Channel - 20V 3.1A (Tc) 112 mOhm @ 2.8A, 4.5V 1V @ 250µA 10nC @ 4.5V 405pF @ 10V 2.5V, 4.5V ±8V
SI2301CDS-T1-GE3
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2,205
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Vishay Siliconix MOSFET P-CH 20V 3.1A SOT23-3 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 860mW (Ta), 1.6W (Tc) P-Channel - 20V 3.1A (Tc) 112 mOhm @ 2.8A, 4.5V 1V @ 250µA 10nC @ 4.5V 405pF @ 10V 2.5V, 4.5V ±8V
SI2301CDS-T1-E3
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3,185
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Vishay Siliconix MOSFET P-CH 20V 3.1A SOT23-3 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 860mW (Ta), 1.6W (Tc) P-Channel - 20V 3.1A (Tc) 112 mOhm @ 2.8A, 4.5V 1V @ 250µA 10nC @ 4.5V 405pF @ 10V 2.5V, 4.5V ±8V
SI2301CDS-T1-E3
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3,679
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Vishay Siliconix MOSFET P-CH 20V 3.1A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 860mW (Ta), 1.6W (Tc) P-Channel - 20V 3.1A (Tc) 112 mOhm @ 2.8A, 4.5V 1V @ 250µA 10nC @ 4.5V 405pF @ 10V 2.5V, 4.5V ±8V
SI2301CDS-T1-E3
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RFQ
3,332
In-stock
Vishay Siliconix MOSFET P-CH 20V 3.1A SOT23-3 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 860mW (Ta), 1.6W (Tc) P-Channel - 20V 3.1A (Tc) 112 mOhm @ 2.8A, 4.5V 1V @ 250µA 10nC @ 4.5V 405pF @ 10V 2.5V, 4.5V ±8V