Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
DMT6004SCT
RFQ
VIEW
RFQ
1,085
In-stock
Diodes Incorporated MOSFET N-CH 60V 100A TO220-3 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 2.3W (Ta), 113W (Tc) N-Channel - 60V 100A (Tc) 3.65 mOhm @ 100A, 10V 4V @ 250µA 95.4nC @ 10V 4556pF @ 30V 10V ±20V
DMT69M8LPS-13
RFQ
VIEW
RFQ
1,163
In-stock
Diodes Incorporated MOSFET N-CHA 60V 10.2A POWERDI Automotive, AEC-Q101 Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 2.3W (Ta), 113W (Tc) N-Channel - 60V 10.2A (Ta), 70A (Tc) 12 mOhm @ 13.5A, 10V 2V @ 250µA 33.5nC @ 10V 1925pF @ 30V 4.5V, 10V ±16V
DMT69M8LPS-13
RFQ
VIEW
RFQ
2,773
In-stock
Diodes Incorporated MOSFET N-CHA 60V 10.2A POWERDI Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 2.3W (Ta), 113W (Tc) N-Channel - 60V 10.2A (Ta), 70A (Tc) 12 mOhm @ 13.5A, 10V 2V @ 250µA 33.5nC @ 10V 1925pF @ 30V 4.5V, 10V ±16V
DMT69M8LPS-13
RFQ
VIEW
RFQ
3,466
In-stock
Diodes Incorporated MOSFET N-CHA 60V 10.2A POWERDI Automotive, AEC-Q101 Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 2.3W (Ta), 113W (Tc) N-Channel - 60V 10.2A (Ta), 70A (Tc) 12 mOhm @ 13.5A, 10V 2V @ 250µA 33.5nC @ 10V 1925pF @ 30V 4.5V, 10V ±16V