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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	FQI11P06TU	RFQ VIEW	PDF RFQ	1,319 In-stock	ON Semiconductor	MOSFET P-CH 60V 11.4A I2PAK		QFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK (TO-262)	3.13W (Ta), 53W (Tc)	P-Channel	-	60V	11.4A (Tc)	175 mOhm @ 5.7A, 10V	4V @ 250µA	17nC @ 10V	550pF @ 25V	10V	±25V
	FQB11P06TM	RFQ VIEW	PDF RFQ	1,970 In-stock	ON Semiconductor	MOSFET P-CH 60V 11.4A D2PAK		QFET®	Active	Digi-Reel®	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D²PAK (TO-263AB)	3.13W (Ta), 53W (Tc)	P-Channel	-	60V	11.4A (Tc)	175 mOhm @ 5.7A, 10V	4V @ 250µA	17nC @ 10V	550pF @ 25V	10V	±25V
	FQB11P06TM	RFQ VIEW	PDF RFQ	1,453 In-stock	ON Semiconductor	MOSFET P-CH 60V 11.4A D2PAK		QFET®	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D²PAK (TO-263AB)	3.13W (Ta), 53W (Tc)	P-Channel	-	60V	11.4A (Tc)	175 mOhm @ 5.7A, 10V	4V @ 250µA	17nC @ 10V	550pF @ 25V	10V	±25V
	FQB11P06TM	RFQ VIEW	PDF RFQ	1,872 In-stock	ON Semiconductor	MOSFET P-CH 60V 11.4A D2PAK		QFET®	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D²PAK (TO-263AB)	3.13W (Ta), 53W (Tc)	P-Channel	-	60V	11.4A (Tc)	175 mOhm @ 5.7A, 10V	4V @ 250µA	17nC @ 10V	550pF @ 25V	10V	±25V

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