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- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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15 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,376
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 45A 8-TSON | U-MOSVIII | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 30V | 45A (Tc) | 2.2 mOhm @ 22.5A, 10V | 2.3V @ 500µA | 34nC @ 10V | 2230pF @ 15V | 10V | ±20V | ||||
VIEW |
2,335
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 45A 8-TSON | U-MOSVIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 30V | 45A (Tc) | 2.2 mOhm @ 22.5A, 10V | 2.3V @ 500µA | 34nC @ 10V | 2230pF @ 15V | 10V | ±20V | ||||
VIEW |
2,188
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 45A 8-TSON | U-MOSVIII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 30V | 45A (Tc) | 2.2 mOhm @ 22.5A, 10V | 2.3V @ 500µA | 34nC @ 10V | 2230pF @ 15V | 10V | ±20V | ||||
VIEW |
742
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 100V 17A 8TSON-ADV | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 100V | 17A (Tc) | 16 mOhm @ 8.5A, 10V | 4V @ 200µA | 19nC @ 10V | 1600pF @ 50V | 10V | ±20V | ||||
VIEW |
2,875
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 100V 17A 8TSON-ADV | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 100V | 17A (Tc) | 16 mOhm @ 8.5A, 10V | 4V @ 200µA | 19nC @ 10V | 1600pF @ 50V | 10V | ±20V | ||||
VIEW |
1,987
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 100V 17A 8TSON-ADV | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 100V | 17A (Tc) | 16 mOhm @ 8.5A, 10V | 4V @ 200µA | 19nC @ 10V | 1600pF @ 50V | 10V | ±20V | ||||
VIEW |
3,579
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 26A 8TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 60V | 26A (Tc) | 7.5 mOhm @ 13A, 10V | 4V @ 200µA | 22nC @ 10V | 1800pF @ 30V | 6.5V, 10V | ±20V | ||||
VIEW |
2,769
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 26A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 60V | 26A (Tc) | 7.5 mOhm @ 13A, 10V | 4V @ 200µA | 22nC @ 10V | 1800pF @ 30V | 6.5V, 10V | ±20V | ||||
VIEW |
3,336
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 26A 8TSON | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 60V | 26A (Tc) | 7.5 mOhm @ 13A, 10V | 4V @ 200µA | 22nC @ 10V | 1800pF @ 30V | 6.5V, 10V | ±20V | ||||
VIEW |
1,940
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 45A 8-TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 30V | 45A (Tc) | 2.7 mOhm @ 22.5A, 10V | 2.3V @ 300µA | 21nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
3,799
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 45A 8-TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 30V | 45A (Tc) | 2.7 mOhm @ 22.5A, 10V | 2.3V @ 300µA | 21nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
2,085
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 45A 8-TSON | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 30V | 45A (Tc) | 2.7 mOhm @ 22.5A, 10V | 2.3V @ 300µA | 21nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
1,821
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 80V 40A 8TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 80V | 18A (Tc) | 13.3 mOhm @ 9A, 10V | 4V @ 200µA | 18nC @ 10V | 1600pF @ 40V | 10V | ±20V | ||||
VIEW |
1,235
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 80V 40A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 80V | 18A (Tc) | 13.3 mOhm @ 9A, 10V | 4V @ 200µA | 18nC @ 10V | 1600pF @ 40V | 10V | ±20V | ||||
VIEW |
2,183
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 80V 40A 8TSON | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 80V | 18A (Tc) | 13.3 mOhm @ 9A, 10V | 4V @ 200µA | 18nC @ 10V | 1600pF @ 40V | 10V | ±20V |