Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPN2R203NC,L1Q
RFQ
VIEW
RFQ
1,376
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 30V 45A 8-TSON U-MOSVIII Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 30V 45A (Tc) 2.2 mOhm @ 22.5A, 10V 2.3V @ 500µA 34nC @ 10V 2230pF @ 15V 10V ±20V
TPN2R203NC,L1Q
RFQ
VIEW
RFQ
2,335
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 30V 45A 8-TSON U-MOSVIII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 30V 45A (Tc) 2.2 mOhm @ 22.5A, 10V 2.3V @ 500µA 34nC @ 10V 2230pF @ 15V 10V ±20V
TPN2R203NC,L1Q
RFQ
VIEW
RFQ
2,188
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 30V 45A 8-TSON U-MOSVIII Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 30V 45A (Tc) 2.2 mOhm @ 22.5A, 10V 2.3V @ 500µA 34nC @ 10V 2230pF @ 15V 10V ±20V
TPN1600ANH,L1Q
RFQ
VIEW
RFQ
742
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 100V 17A 8TSON-ADV U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 100V 17A (Tc) 16 mOhm @ 8.5A, 10V 4V @ 200µA 19nC @ 10V 1600pF @ 50V 10V ±20V
TPN1600ANH,L1Q
RFQ
VIEW
RFQ
2,875
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 100V 17A 8TSON-ADV U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 100V 17A (Tc) 16 mOhm @ 8.5A, 10V 4V @ 200µA 19nC @ 10V 1600pF @ 50V 10V ±20V
TPN1600ANH,L1Q
RFQ
VIEW
RFQ
1,987
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 100V 17A 8TSON-ADV U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 100V 17A (Tc) 16 mOhm @ 8.5A, 10V 4V @ 200µA 19nC @ 10V 1600pF @ 50V 10V ±20V
TPN7R506NH,L1Q
RFQ
VIEW
RFQ
3,579
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 26A 8TSON U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 60V 26A (Tc) 7.5 mOhm @ 13A, 10V 4V @ 200µA 22nC @ 10V 1800pF @ 30V 6.5V, 10V ±20V
TPN7R506NH,L1Q
RFQ
VIEW
RFQ
2,769
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 26A 8TSON U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 60V 26A (Tc) 7.5 mOhm @ 13A, 10V 4V @ 200µA 22nC @ 10V 1800pF @ 30V 6.5V, 10V ±20V
TPN7R506NH,L1Q
RFQ
VIEW
RFQ
3,336
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 26A 8TSON U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 60V 26A (Tc) 7.5 mOhm @ 13A, 10V 4V @ 200µA 22nC @ 10V 1800pF @ 30V 6.5V, 10V ±20V
TPN2R703NL,L1Q
RFQ
VIEW
RFQ
1,940
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 30V 45A 8-TSON U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 30V 45A (Tc) 2.7 mOhm @ 22.5A, 10V 2.3V @ 300µA 21nC @ 10V 2100pF @ 15V 4.5V, 10V ±20V
TPN2R703NL,L1Q
RFQ
VIEW
RFQ
3,799
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 30V 45A 8-TSON U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 30V 45A (Tc) 2.7 mOhm @ 22.5A, 10V 2.3V @ 300µA 21nC @ 10V 2100pF @ 15V 4.5V, 10V ±20V
TPN2R703NL,L1Q
RFQ
VIEW
RFQ
2,085
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 30V 45A 8-TSON U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 30V 45A (Tc) 2.7 mOhm @ 22.5A, 10V 2.3V @ 300µA 21nC @ 10V 2100pF @ 15V 4.5V, 10V ±20V
TPN13008NH,L1Q
RFQ
VIEW
RFQ
1,821
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 80V 40A 8TSON U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 80V 18A (Tc) 13.3 mOhm @ 9A, 10V 4V @ 200µA 18nC @ 10V 1600pF @ 40V 10V ±20V
TPN13008NH,L1Q
RFQ
VIEW
RFQ
1,235
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 80V 40A 8TSON U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 80V 18A (Tc) 13.3 mOhm @ 9A, 10V 4V @ 200µA 18nC @ 10V 1600pF @ 40V 10V ±20V
TPN13008NH,L1Q
RFQ
VIEW
RFQ
2,183
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 80V 40A 8TSON U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 80V 18A (Tc) 13.3 mOhm @ 9A, 10V 4V @ 200µA 18nC @ 10V 1600pF @ 40V 10V ±20V