- Series :
- Part Status :
- Packaging :
- Technology :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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13 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,020
In-stock
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Infineon Technologies | MOSFET N-CH 650V 19A VSON-4 | CoolMOS™ P7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 81W (Tc) | N-Channel | 650V | 19A (Tc) | 185 mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | 1081pF @ 400V | 10V | ±20V | |||
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|
VIEW |
2,157
In-stock
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Infineon Technologies | MOSFET N-CH 650V 19A VSON-4 | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 81W (Tc) | N-Channel | 650V | 19A (Tc) | 185 mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | 1081pF @ 400V | 10V | ±20V | |||
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|
VIEW |
3,309
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 19A VSON-4 | CoolMOS™ P7 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 81W (Tc) | N-Channel | 650V | 19A (Tc) | 185 mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | 1081pF @ 400V | 10V | ±20V | |||
|
VIEW |
1,718
In-stock
|
Transphorm | MOSFET N-CH 650V 16A PQFN | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PowerDFN | PQFN (8x8) | 81W (Tc) | N-Channel | 650V | 16A (Tc) | 180 mOhm @ 10A, 8V | 2.6V @ 500µA | 6.2nC @ 4.5V | 720pF @ 480V | 8V | ±18V | |||
|
VIEW |
1,201
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 81W (Tc) | N-Channel | 60V | 60A (Tc) | 13.5 mOhm @ 10A, 4.5V | 2.5V @ 200µA | 22nC @ 10V | 1875pF @ 30V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,549
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 81W (Tc) | N-Channel | 60V | 60A (Tc) | 13.5 mOhm @ 10A, 4.5V | 2.5V @ 200µA | 22nC @ 10V | 1875pF @ 30V | 4.5V, 10V | ±20V | |||
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VIEW |
850
In-stock
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Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 81W (Tc) | N-Channel | 60V | 60A (Tc) | 13.5 mOhm @ 10A, 4.5V | 2.5V @ 200µA | 22nC @ 10V | 1875pF @ 30V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,623
In-stock
|
Transphorm | MOSFET N-CH 650V 16A PQFN | - | Active | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PowerDFN | PQFN (8x8) | 81W (Tc) | N-Channel | 650V | 16A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
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|
VIEW |
751
In-stock
|
Transphorm | MOSFET N-CH 650V 16A PQFN | - | Active | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PowerDFN | PQFN (8x8) | 81W (Tc) | N-Channel | 650V | 16A (Tc) | 180 mOhm @ 10A, 8V | 2.6V @ 500µA | 6.2nC @ 4.5V | 720pF @ 480V | 8V | ±18V | |||
|
VIEW |
873
In-stock
|
Transphorm | MOSFET N-CH 650V 16A TO220AB | - | Active | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 81W (Tc) | N-Channel | 650V | 16A (Tc) | 180 mOhm @ 10A, 8V | 2.6V @ 500µA | 6.2nC @ 4.5V | 720pF @ 480V | 8V | ±18V | |||
|
VIEW |
2,641
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 30V 100A LFPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 81W (Tc) | N-Channel | 30V | 100A (Tc) | 3 mOhm @ 15A, 10V | 2.15V @ 1mA | 45.8nC @ 10V | 2822pF @ 12V | 4.5V, 10V | ±20V | |||
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|
VIEW |
754
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 30V 100A LFPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 81W (Tc) | N-Channel | 30V | 100A (Tc) | 3 mOhm @ 15A, 10V | 2.15V @ 1mA | 45.8nC @ 10V | 2822pF @ 12V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,442
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 30V 100A LFPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 81W (Tc) | N-Channel | 30V | 100A (Tc) | 3 mOhm @ 15A, 10V | 2.15V @ 1mA | 45.8nC @ 10V | 2822pF @ 12V | 4.5V, 10V | ±20V | |||
