Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPH3206LDB
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RFQ
1,718
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Transphorm MOSFET N-CH 650V 16A PQFN - Last Time Buy Tube GaNFET (Gallium Nitride) -55°C ~ 150°C (TJ) Surface Mount 4-PowerDFN PQFN (8x8) 81W (Tc) N-Channel 650V 16A (Tc) 180 mOhm @ 10A, 8V 2.6V @ 500µA 6.2nC @ 4.5V 720pF @ 480V 8V ±18V
TPH3208LD
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RFQ
1,820
In-stock
Transphorm MOSFET N-CH 650V 20A PQFN - Last Time Buy Tube GaNFET (Gallium Nitride) -55°C ~ 150°C (TJ) Surface Mount 4-PowerDFN PQFN (8x8) 96W (Tc) N-Channel 650V 20A (Tc) 130 mOhm @ 13A, 8V 2.6V @ 300µA 14nC @ 8V 760pF @ 400V 8V ±18V
TPH3206LD
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RFQ
1,428
In-stock
Transphorm MOSFET N-CH 600V 17A PQFN - Last Time Buy Tube GaNFET (Gallium Nitride) -55°C ~ 175°C (TJ) Surface Mount 4-PowerDFN PQFN (8x8) 96W (Tc) N-Channel 600V 17A (Tc) 180 mOhm @ 11A, 8V 2.6V @ 500µA 9.3nC @ 4.5V 760pF @ 480V 8V ±18V
TPH3202LD
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RFQ
2,306
In-stock
Transphorm MOSFET N-CH 600V 9A PQFN - Last Time Buy Tube GaNFET (Gallium Nitride) -55°C ~ 175°C (TJ) Surface Mount 4-PowerDFN PQFN (8x8) 65W (Tc) N-Channel 600V 9A (Tc) 350 mOhm @ 5.5A, 8V 2.5V @ 250µA 9.3nC @ 4.5V 760pF @ 480V 8V ±18V