Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Diodes Incorporated MOSFET BVDSS: 501V 650V TO251 Automotive, AEC-Q101 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3, IPak, Short Leads TO-251 41W (Tc) N-Channel 650V 2.8A (Tc) 3.5 Ohm @ 1.5A, 10V 4V @ 250µA 12.6nC @ 10V 354pF @ 25V 10V ±30V
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Diodes Incorporated MOSFET BVDSS: 651V 800V TO251 Automotive, AEC-Q101 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3, IPak, Short Leads TO-251 113W (Tc) N-Channel 700V 11A (Tc) 600 mOhm @ 2.4A, 10V 4V @ 250µA 18.2nC @ 10V 643pF @ 25V 10V ±30V
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Diodes Incorporated MOSFET BVDSS: 501V 650V TO251 Automotive, AEC-Q101 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3, IPak, Short Leads TO-251 125W (Tc) N-Channel 650V 5.5A (Tc) 1.4 Ohm @ 2.5A, 10V 4V @ 250µA 25nC @ 10V 886pF @ 50V 10V ±30V
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Diodes Incorporated MOSFET BVDSS: 651V 800V TO251 Automotive, AEC-Q101 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3, IPak, Short Leads TO-251 68W (Tc) N-Channel 700V 7A (Tc) 900 mOhm @ 1.5A, 10V 4V @ 250µA 18.4nC @ 10V 603pF @ 50V 10V ±30V
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Diodes Incorporated MOSFET P-CH 450V 4.6A TO251 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3, IPak, Short Leads TO-251 104W (Tc) P-Channel 450V 4.6A (Tc) 4.9 Ohm @ 1.05A, 10V 5V @ 250µA 13.7nC @ 10V 547pF @ 25V 10V ±30V