Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Toshiba Semiconductor and Storage MOSFET N CH 30V 40A 8TSON-ADV U-MOSVIII Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 35W (Tc) N-Channel - 30V 40A (Ta) 2.5 mOhm @ 20A, 10V 2.3V @ 500µA 40nC @ 10V 2230pF @ 15V 4.5V, 10V ±20V
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3,576
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Toshiba Semiconductor and Storage MOSFET N CH 30V 40A 8TSON-ADV U-MOSVIII Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 35W (Tc) N-Channel - 30V 40A (Ta) 2.5 mOhm @ 20A, 10V 2.3V @ 500µA 40nC @ 10V 2230pF @ 15V 4.5V, 10V ±20V
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Toshiba Semiconductor and Storage MOSFET N CH 30V 40A 8TSON-ADV U-MOSVIII Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 35W (Tc) N-Channel - 30V 40A (Ta) 2.5 mOhm @ 20A, 10V 2.3V @ 500µA 40nC @ 10V 2230pF @ 15V 4.5V, 10V ±20V
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1,578
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Toshiba Semiconductor and Storage MOSFET N CH 30V 20A 8TSON-ADV U-MOSVIII Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 19W (Tc) N-Channel - 30V 20A (Ta) 6.3 mOhm @ 10A, 10V 2.3V @ 200µA 24nC @ 10V 1370pF @ 15V 4.5V, 10V ±20V
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3,282
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Toshiba Semiconductor and Storage MOSFET N CH 30V 20A 8TSON-ADV U-MOSVIII Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 19W (Tc) N-Channel - 30V 20A (Ta) 6.3 mOhm @ 10A, 10V 2.3V @ 200µA 24nC @ 10V 1370pF @ 15V 4.5V, 10V ±20V
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1,333
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Toshiba Semiconductor and Storage MOSFET N CH 30V 20A 8TSON-ADV U-MOSVIII Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 19W (Tc) N-Channel - 30V 20A (Ta) 6.3 mOhm @ 10A, 10V 2.3V @ 200µA 24nC @ 10V 1370pF @ 15V 4.5V, 10V ±20V
TPN2R203NC,L1Q
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1,376
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 45A 8-TSON U-MOSVIII Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 30V 45A (Tc) 2.2 mOhm @ 22.5A, 10V 2.3V @ 500µA 34nC @ 10V 2230pF @ 15V 10V ±20V
TPN2R203NC,L1Q
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2,335
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 45A 8-TSON U-MOSVIII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 30V 45A (Tc) 2.2 mOhm @ 22.5A, 10V 2.3V @ 500µA 34nC @ 10V 2230pF @ 15V 10V ±20V
TPN2R203NC,L1Q
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2,188
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 45A 8-TSON U-MOSVIII Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 30V 45A (Tc) 2.2 mOhm @ 22.5A, 10V 2.3V @ 500µA 34nC @ 10V 2230pF @ 15V 10V ±20V
TPN4R203NC,L1Q
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1,397
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Toshiba Semiconductor and Storage MOSFET N CH 30V 23A 8TSON-ADV U-MOSVIII Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 22W (Tc) N-Channel - 30V 23A (Ta) 4.2 mOhm @ 11.5A, 10V 2.3V @ 200µA 24nC @ 10V 1370pF @ 15V 4.5V, 10V ±20V
TPN4R203NC,L1Q
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1,188
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Toshiba Semiconductor and Storage MOSFET N CH 30V 23A 8TSON-ADV U-MOSVIII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 22W (Tc) N-Channel - 30V 23A (Ta) 4.2 mOhm @ 11.5A, 10V 2.3V @ 200µA 24nC @ 10V 1370pF @ 15V 4.5V, 10V ±20V
TPN4R203NC,L1Q
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3,264
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Toshiba Semiconductor and Storage MOSFET N CH 30V 23A 8TSON-ADV U-MOSVIII Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 22W (Tc) N-Channel - 30V 23A (Ta) 4.2 mOhm @ 11.5A, 10V 2.3V @ 200µA 24nC @ 10V 1370pF @ 15V 4.5V, 10V ±20V