Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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1,153
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Infineon Technologies MOSFET N-CH 100V 80A TO262-3 OptiMOS™ 3 Obsolete - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 150W (Tc) N-Channel 100V 80A (Tc) 7.2 mOhm @ 80A, 10V 3.5V @ 90µA 68nC @ 10V 4910pF @ 50V 6V, 10V ±20V
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771
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Infineon Technologies MOSFET N-CH 75V 120A TO220 OptiMOS™ 3 Obsolete - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3 300W (Tc) N-Channel 75V 120A (Tc) 2.3 mOhm @ 100A, 10V 3.8V @ 273µA 206nC @ 10V 14400pF @ 37.5V 10V ±20V
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840
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Infineon Technologies MOSFET N-CH 100V 100A TO262-3 OptiMOS™ 3 Obsolete - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 214W (Tc) N-Channel 100V 137A (Tc) 4.5 mOhm @ 100A, 10V 3.5V @ 150µA 117nC @ 10V 8410pF @ 50V 6V, 10V ±20V
IPB110N20N3LFATMA1
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2,297
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Infineon Technologies MOSFET N-CH 200 D2PAK-3 OptiMOS™ 3 Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3 250W (Tc) N-Channel 200V 88A (Tc) 11 mOhm @ 88A, 10V 4.2V @ 260µA 76nC @ 10V 650pF @ 100V 10V ±20V
IPB110N20N3LFATMA1
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2,246
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Infineon Technologies MOSFET N-CH 200 D2PAK-3 OptiMOS™ 3 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3 250W (Tc) N-Channel 200V 88A (Tc) 11 mOhm @ 88A, 10V 4.2V @ 260µA 76nC @ 10V 650pF @ 100V 10V ±20V
IPB110N20N3LFATMA1
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2,778
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Infineon Technologies MOSFET N-CH 200 D2PAK-3 OptiMOS™ 3 Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3 250W (Tc) N-Channel 200V 88A (Tc) 11 mOhm @ 88A, 10V 4.2V @ 260µA 76nC @ 10V 650pF @ 100V 10V ±20V
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3,915
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Infineon Technologies MOSFET N-CH 30V 2A SAWN ON FOIL OptiMOS™ 3 Active - MOSFET (Metal Oxide) - Surface Mount Die Sawn on foil - N-Channel 30V - 50 mOhm @ 2A, 10V 2.2V @ 250µA - - 10V -