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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	TK15A60U(STA4,Q,M)	RFQ VIEW	PDF RFQ	1,058 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 15A TO-220SIS		DTMOSII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	40W (Tc)	N-Channel	-	600V	15A (Ta)	300 mOhm @ 7.5A, 10V	5V @ 1mA	17nC @ 10V	950pF @ 10V	10V	±30V
	TK12A60U(Q,M)	RFQ VIEW	PDF RFQ	927 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 12A TO220SIS		DTMOSII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	35W (Tc)	N-Channel	-	600V	12A (Ta)	400 mOhm @ 6A, 10V	5V @ 1mA	14nC @ 10V	720pF @ 10V	10V	±30V
	TK15J60U(F)	RFQ VIEW	PDF RFQ	1,741 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 15A TO-3PN		DTMOSII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)	170W (Tc)	N-Channel	-	600V	15A (Ta)	300 mOhm @ 7.5A, 10V	5V @ 1mA	17nC @ 10V	950pF @ 10V	10V	±30V
	TK20A60U(Q,M)	RFQ VIEW	PDF RFQ	2,649 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 20A TO-220SIS		DTMOSII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	600V	20A (Ta)	190 mOhm @ 10A, 10V	5V @ 1mA	27nC @ 10V	1470pF @ 10V	10V	±30V
	TK20J60U(F)	RFQ VIEW	PDF RFQ	1,720 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 20A TO-3PN		DTMOSII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)	190W (Tc)	N-Channel	-	600V	20A (Ta)	190 mOhm @ 10A, 10V	5V @ 1mA	27nC @ 10V	1470pF @ 10V	10V	±30V
	TK12J60U(F)	RFQ VIEW	PDF RFQ	2,692 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 12A TO-3PN		DTMOSII	Active	Bulk	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)	144W (Tc)	N-Channel	-	600V	12A (Ta)	400 mOhm @ 6A, 10V	5V @ 1mA	14nC @ 10V	720pF @ 10V	10V	±30V
	TK13A65U(STA4,Q,M)	RFQ VIEW	PDF RFQ	1,166 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 13A TO-220SIS		DTMOSII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	40W (Tc)	N-Channel	-	650V	13A (Ta)	380 mOhm @ 6.5A, 10V	5V @ 1mA	17nC @ 10V	950pF @ 10V	10V	±30V

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