Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FCPF13N60NT
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VIEW
RFQ
3,558
In-stock
ON Semiconductor MOSFET N-CH 600V 13A TO220F SuperMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F-3 (Y-Forming) 33.8W (Tc) N-Channel - 600V 13A (Tc) 258 mOhm @ 6.5A, 10V 4V @ 250µA 39.5nC @ 10V 1765pF @ 100V 10V ±30V
FCH35N60
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VIEW
RFQ
1,851
In-stock
ON Semiconductor MOSFET N-CH 600V 35A TO-247 SuperMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 312.5W (Tc) N-Channel - 600V 35A (Tc) 98 mOhm @ 17.5A, 10V 5V @ 250µA 181nC @ 10V 6640pF @ 25V 10V ±30V
FCPF11N60NT
RFQ
VIEW
RFQ
3,508
In-stock
ON Semiconductor MOSFET N-CH 600V 10.8A TO220F SuperMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 32.1W (Tc) N-Channel - 600V 10.8A (Tc) 299 mOhm @ 5.4A, 10V 4V @ 250µA 35.6nC @ 10V 1505pF @ 100V 10V ±30V
FCPF9N60NT
RFQ
VIEW
RFQ
1,164
In-stock
ON Semiconductor MOSFET N-CH 600V 9A TO220F SuperMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 29.8W (Tc) N-Channel - 600V 9A (Tc) 385 mOhm @ 4.5A, 10V 4V @ 250µA 29nC @ 10V 1240pF @ 100V 10V ±30V
FCP9N60N
RFQ
VIEW
RFQ
846
In-stock
ON Semiconductor MOSFET N-CH 600V 9A TO220 SuperMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 83.3W (Tc) N-Channel - 600V 9A (Tc) 385 mOhm @ 4.5A, 10V 4V @ 250µA 29nC @ 10V 1240pF @ 100V 10V ±30V