- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
-
- 1.25W (Ta) (3)
- 1.8W (Ta), 81W (Tc) (1)
- 104W (Tc) (3)
- 132W (Tc) (6)
- 1W (Ta), 170W (Tc) (6)
- 2.5W (Ta) (3)
- 2.67W (Ta), 104W (Tc) (1)
- 36W (Tc) (3)
- 630mW (Ta), 104W (Tc) (3)
- 630mW (Ta), 86W (Tc) (3)
- 66W (Tc) (3)
- 69W (Tc) (3)
- 81W (Tc) (3)
- 87W (Tc) (8)
- 90W (Tc) (3)
- 960mW (Ta), 132W (Tc) (3)
- 960mW (Ta), 170W (Tc) (12)
- 960mW (Ta), 81W (Tc) (3)
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 0.65 mOhm @ 50A, 10V (3)
- 0.8 mOhm @ 50A, 10V (3)
- 0.85 mOhm @ 50A, 10V (3)
- 1.04 mOhm @ 50A, 10V (3)
- 1.2 mOhm @ 80A, 10V (3)
- 1.24 mOhm @ 50A, 10V (3)
- 11.4 mOhm @ 8A, 4.5V (1)
- 11.6 mOhm @ 4A, 10V (3)
- 13.5 mOhm @ 10A, 4.5V (3)
- 2.3 mOhm @ 40A, 10V (3)
- 2.8 mOhm @ 40A, 10V (1)
- 3.1 mOhm @ 29A, 10V (3)
- 3.7 mOhm @ 40A, 10V (3)
- 3.7 mOhm @ 46A, 10V (3)
- 3.8 mOhm @ 30A, 4.5V (2)
- 4.2 mOhm @ 44A, 4.5V (3)
- 4.4 mOhm @ 29A, 10V (3)
- 4.4 mOhm @ 30A, 4.5V (3)
- 6 mOhm @ 24.5A, 10V (1)
- 6.7 mOhm @ 23A, 10V (3)
- 7.2 mOhm @ 15A, 4.5V (2)
- 8.9 mOhm @ 4A, 10V (3)
- 9.7 mOhm @ 15A, 4.5V (3)
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 10000pF @ 15V (3)
- 1110pF @ 20V (3)
- 1130pF @ 15V (3)
- 1875pF @ 30V (3)
- 1990pF @ 25V (1)
- 1990pF @ 30V (3)
- 2040pF @ 20V (3)
- 2500pF @ 20V (6)
- 2700pF @ 20V (1)
- 3.2nF @ 22.5V (1)
- 3280pF @ 30V (5)
- 3600pF @ 20V (3)
- 3825pF @ 15V (3)
- 3900pF @ 15V (3)
- 4670pF @ 20V (5)
- 5435pF @ 30V (3)
- 7200pF @ 20V (3)
- 7540pF @ 15V (3)
- 9600pF @ 20V (6)
- 9600pF @ 22.5V (6)
- Applied Filters :
70 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,632
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | - | MOSFET (Metal Oxide) | 175°C | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.8W (Ta), 81W (Tc) | N-Channel | - | 40V | 87A (Ta), 49A (Tc) | 6 mOhm @ 24.5A, 10V | 2.4V @ 200µA | 30nC @ 10V | 2700pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
2,792
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | - | MOSFET (Metal Oxide) | 175°C | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 2.67W (Ta), 104W (Tc) | N-Channel | - | 45V | 139A (Ta), 80A (Tc) | 2.8 mOhm @ 40A, 10V | 2.4V @ 300µA | 39nC @ 10V | 3.2nF @ 22.5V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,116
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 36W (Tc) | N-Channel | - | 60V | 68A (Tc) | 7.2 mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,556
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 87W (Tc) | N-Channel | - | 60V | 80A (Tc) | 7.2 mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,121
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 36W (Tc) | N-Channel | - | 40V | 82A (Tc) | 3.8 mOhm @ 30A, 4.5V | 2.4V @ 500µA | 63.4nC @ 10V | 4670pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,826
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 87W (Tc) | N-Channel | - | 40V | 100A (Tc) | 3.8 mOhm @ 30A, 4.5V | 2.4V @ 500µA | 63.4nC @ 10V | 4670pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
2,952
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 36W (Tc) | N-Channel | - | 60V | 50A (Tc) | 11.4 mOhm @ 8A, 4.5V | 2.5V @ 300µA | 28.4nC @ 10V | 1990pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,680
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 150A | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 960mW (Ta), 132W (Tc) | N-Channel | - | 40V | 150A (Tc) | 1.24 mOhm @ 50A, 10V | 2.4V @ 500µA | 74nC @ 10V | 7200pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,540
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 150A | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 960mW (Ta), 132W (Tc) | N-Channel | - | 40V | 150A (Tc) | 1.24 mOhm @ 50A, 10V | 2.4V @ 500µA | 74nC @ 10V | 7200pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
853
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 150A | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 960mW (Ta), 132W (Tc) | N-Channel | - | 40V | 150A (Tc) | 1.24 mOhm @ 50A, 10V | 2.4V @ 500µA | 74nC @ 10V | 7200pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,201
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 81W (Tc) | N-Channel | - | 60V | 60A (Tc) | 13.5 mOhm @ 10A, 4.5V | 2.5V @ 200µA | 22nC @ 10V | 1875pF @ 30V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
3,549
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 81W (Tc) | N-Channel | - | 60V | 60A (Tc) | 13.5 mOhm @ 10A, 4.5V | 2.5V @ 200µA | 22nC @ 10V | 1875pF @ 30V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
850
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 81W (Tc) | N-Channel | - | 60V | 60A (Tc) | 13.5 mOhm @ 10A, 4.5V | 2.5V @ 200µA | 22nC @ 10V | 1875pF @ 30V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,661
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 132W (Tc) | N-Channel | - | 30V | 150A (Tc) | - | 2.1V @ 500µA | 80nC @ 10V | 7540pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
729
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 132W (Tc) | N-Channel | - | 30V | 150A (Tc) | - | 2.1V @ 500µA | 80nC @ 10V | 7540pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,511
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 132W (Tc) | N-Channel | - | 30V | 150A (Tc) | - | 2.1V @ 500µA | 80nC @ 10V | 7540pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
2,003
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 150A 8SOP | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 960mW (Ta), 170W (Tc) | N-Channel | - | 30V | 150A (Tc) | 0.65 mOhm @ 50A, 10V | 2.1V @ 1mA | 110nC @ 10V | 10000pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
2,015
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 150A 8SOP | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 960mW (Ta), 170W (Tc) | N-Channel | - | 30V | 150A (Tc) | 0.65 mOhm @ 50A, 10V | 2.1V @ 1mA | 110nC @ 10V | 10000pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
787
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 150A 8SOP | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 960mW (Ta), 170W (Tc) | N-Channel | - | 30V | 150A (Tc) | 0.65 mOhm @ 50A, 10V | 2.1V @ 1mA | 110nC @ 10V | 10000pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
2,426
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 132W (Tc) | N-Channel | - | 60V | 100A (Tc) | 4.4 mOhm @ 30A, 4.5V | 2.5V @ 500µA | 60nC @ 10V | 5435pF @ 30V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,005
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 132W (Tc) | N-Channel | - | 60V | 100A (Tc) | 4.4 mOhm @ 30A, 4.5V | 2.5V @ 500µA | 60nC @ 10V | 5435pF @ 30V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
2,363
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 132W (Tc) | N-Channel | - | 60V | 100A (Tc) | 4.4 mOhm @ 30A, 4.5V | 2.5V @ 500µA | 60nC @ 10V | 5435pF @ 30V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,205
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | - | Surface Mount | 8-PowerVDFN | 8-DSOP Advance | 960mW (Ta), 170W (Tc) | N-Channel | - | 60V | 260A (Tc) | - | - | - | - | 4.5V, 10V | ±20V | |||
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|
VIEW |
1,971
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | - | Surface Mount | 8-PowerVDFN | 8-DSOP Advance | 960mW (Ta), 170W (Tc) | N-Channel | - | 60V | 260A (Tc) | - | - | - | - | 4.5V, 10V | ±20V | |||
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|
VIEW |
752
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | - | Surface Mount | 8-PowerVDFN | 8-DSOP Advance | 960mW (Ta), 170W (Tc) | N-Channel | - | 60V | 260A (Tc) | - | - | - | - | 4.5V, 10V | ±20V | |||
|
|
VIEW |
3,578
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 150A 8SOP | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1W (Ta), 170W (Tc) | N-Channel | - | 40V | 150A (Tc) | 0.85 mOhm @ 50A, 10V | 2.4V @ 1mA | 103nC @ 10V | 9600pF @ 20V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
667
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 150A 8SOP | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1W (Ta), 170W (Tc) | N-Channel | - | 40V | 150A (Tc) | 0.85 mOhm @ 50A, 10V | 2.4V @ 1mA | 103nC @ 10V | 9600pF @ 20V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,811
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 150A 8SOP | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1W (Ta), 170W (Tc) | N-Channel | - | 40V | 150A (Tc) | 0.85 mOhm @ 50A, 10V | 2.4V @ 1mA | 103nC @ 10V | 9600pF @ 20V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,549
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 60V 58A DPAK | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 87W (Tc) | N-Channel | - | 60V | 58A (Tc) | 4.4 mOhm @ 29A, 10V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
3,326
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 60V 58A DPAK | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 87W (Tc) | N-Channel | - | 60V | 58A (Tc) | 4.4 mOhm @ 29A, 10V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | 4.5V, 10V | ±20V | |||
