- Series :
- Part Status :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Input Capacitance (Ciss) (Max) @ Vds :
11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
2,871
In-stock
|
GeneSiC Semiconductor | TRANS SJT 650V 16A TO276 | - | Obsolete | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276AA | TO-276 | 330W (Tc) | - | 650V | 16A (Tc) (155°C) | 105 mOhm @ 16A | - | - | 1534pF @ 35V | - | - | |||
|
|
VIEW |
3,289
In-stock
|
GeneSiC Semiconductor | TRANS SJT 650V 15A TO-257 | - | Obsolete | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-257-3 | TO-257 | 172W (Tc) | - | 650V | 15A (Tc) (155°C) | 105 mOhm @ 15A | - | - | 1534pF @ 35V | - | - | |||
|
VIEW |
2,415
In-stock
|
GeneSiC Semiconductor | TRANS SJT 650V 8A TO276 | - | Obsolete | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276AA | TO-276 | 200W (Tc) | - | 650V | 8A (Tc) (158°C) | 170 mOhm @ 8A | - | - | 720pF @ 35V | - | - | |||
|
VIEW |
1,976
In-stock
|
GeneSiC Semiconductor | TRANS SJT 650V 7A TO-257 | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-257-3 | TO-257 | 80W (Tc) | - | 650V | 7A (Tc) (165°C) | 170 mOhm @ 7A | - | - | 720pF @ 35V | - | - | |||
|
|
VIEW |
3,854
In-stock
|
GeneSiC Semiconductor | TRANS SJT 650V 4A TO276 | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276AA | TO-276 | 125W (Tc) | - | 650V | 4A (Tc) (165°C) | 415 mOhm @ 4A | - | - | 324pF @ 35V | - | - | |||
|
|
VIEW |
621
In-stock
|
GeneSiC Semiconductor | TRANS SJT 650V 4A TO-257 | - | Obsolete | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-257-3 | TO-257 | 47W (Tc) | - | 650V | 4A (Tc) (165°C) | 415 mOhm @ 4A | - | - | 324pF @ 35V | - | - | |||
|
|
VIEW |
1,666
In-stock
|
GeneSiC Semiconductor | TRANS SJT 600V 100A | - | Active | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-258-3, TO-258AA | TO-258 | 769W (Tc) | - | 600V | 100A (Tc) | 25 mOhm @ 50A | - | - | - | - | - | |||
|
VIEW |
1,197
In-stock
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Honeywell Microelectronics & Precision Sensors | MOSFET N-CH 55V 8-DIP | HTMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 225°C (TJ) | Through Hole | 8-CDIP Exposed Pad | 8-CDIP-EP | 50W (Tj) | N-Channel | 55V | - | 400 mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 290pF @ 28V | 5V | 10V | |||
|
VIEW |
2,834
In-stock
|
Honeywell Microelectronics & Precision Sensors | MOSFET N-CH 55V 4-PIN | HTMOS™ | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 225°C (TJ) | Through Hole | 4-SIP | 4-Power Tab | 50W (Tj) | N-Channel | 55V | - | 400 mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 290pF @ 28V | 5V | 10V | |||
|
VIEW |
1,098
In-stock
|
GeneSiC Semiconductor | TRANS SJT 300V 9A | - | Active | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-46-3 | TO-46 | 20W (Tc) | - | 300V | 9A (Tc) | 240 mOhm @ 5A | - | - | - | - | - | |||
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|
VIEW |
2,120
In-stock
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GeneSiC Semiconductor | TRANS SJT 100V 9A | - | Active | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-46-3 | TO-46 | 20W (Tc) | - | 100V | 9A (Tc) | 240 mOhm @ 5A | - | - | - | - | - | |||
