- Packaging :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,444
In-stock
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EPC | TRANS GAN 200V 48A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 140°C (TJ) | Surface Mount | Die | N-Channel | - | 200V | 48A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.8nC @ 5V | 950pF @ 100V | 5V | +6V, -4V | |||
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VIEW |
1,941
In-stock
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EPC | TRANS GAN 200V 48A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 140°C (TJ) | Surface Mount | Die | N-Channel | - | 200V | 48A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.8nC @ 5V | 950pF @ 100V | 5V | +6V, -4V | |||
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VIEW |
670
In-stock
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EPC | TRANS GAN 200V 48A BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 140°C (TJ) | Surface Mount | Die | N-Channel | - | 200V | 48A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.8nC @ 5V | 950pF @ 100V | 5V | +6V, -4V | |||
