Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Honeywell Microelectronics & Precision Sensors MOSFET N-CH 55V 8-DIP HTMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 225°C (TJ) Through Hole 8-CDIP Exposed Pad 8-CDIP-EP 50W (Tj) N-Channel 55V - 400 mOhm @ 100mA, 5V 2.4V @ 100µA 4.3nC @ 5V 290pF @ 28V 5V 10V