Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2SK2995(F)
RFQ
VIEW
RFQ
3,478
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 250V 30A TO-3PN - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N)IS 90W (Tc) N-Channel 250V 30A (Ta) 68 mOhm @ 15A, 10V 3.5V @ 1mA 132nC @ 10V 5400pF @ 10V 10V ±20V
2SK2917(F)
RFQ
VIEW
RFQ
1,846
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 500V 18A TO-3PN - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N)IS 90W (Tc) N-Channel 500V 18A (Ta) 270 mOhm @ 10A, 10V 4V @ 1mA 80nC @ 10V 3720pF @ 10V 10V ±30V
2SK2916(F)
RFQ
VIEW
RFQ
817
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 500V 14A TO-3PN - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N)IS 80W (Tc) N-Channel 500V 14A (Ta) 400 mOhm @ 7A, 10V 4V @ 1mA 58nC @ 10V 2600pF @ 10V 10V ±30V
2SK2847(F)
RFQ
VIEW
RFQ
3,943
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 900V 8A TO-3PN - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N)IS 85W (Tc) N-Channel 900V 8A (Ta) 1.4 Ohm @ 4A, 10V 4V @ 1mA 58nC @ 10V 2040pF @ 25V 10V ±30V