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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRF6892STR1PBF	RFQ VIEW	PDF RFQ	2,677 In-stock	Infineon Technologies	MOSFET N-CH 25V 28A S3		HEXFET®	Obsolete	Digi-Reel®	MOSFET (Metal Oxide)	-40°C ~ 150°C (TJ)	Surface Mount	DirectFET™ Isometric S3C	DIRECTFET™ S3C	2.1W (Ta), 42W (Tc)	N-Channel	-	25V	28A (Ta), 125A (Tc)	1.7 mOhm @ 28A, 10V	2.1V @ 50µA	25nC @ 4.5V	2510pF @ 13V	4.5V, 10V	±16V
	IRF6892STR1PBF	RFQ VIEW	PDF RFQ	2,263 In-stock	Infineon Technologies	MOSFET N-CH 25V 28A S3		HEXFET®	Obsolete	Cut Tape (CT)	MOSFET (Metal Oxide)	-40°C ~ 150°C (TJ)	Surface Mount	DirectFET™ Isometric S3C	DIRECTFET™ S3C	2.1W (Ta), 42W (Tc)	N-Channel	-	25V	28A (Ta), 125A (Tc)	1.7 mOhm @ 28A, 10V	2.1V @ 50µA	25nC @ 4.5V	2510pF @ 13V	4.5V, 10V	±16V
	IRF6892STR1PBF	RFQ VIEW	PDF RFQ	1,547 In-stock	Infineon Technologies	MOSFET N-CH 25V 28A S3		HEXFET®	Obsolete	Tape & Reel (TR)	MOSFET (Metal Oxide)	-40°C ~ 150°C (TJ)	Surface Mount	DirectFET™ Isometric S3C	DIRECTFET™ S3C	2.1W (Ta), 42W (Tc)	N-Channel	-	25V	28A (Ta), 125A (Tc)	1.7 mOhm @ 28A, 10V	2.1V @ 50µA	25nC @ 4.5V	2510pF @ 13V	4.5V, 10V	±16V
	IRF6892STRPBF	RFQ VIEW	PDF RFQ	3,029 In-stock	Infineon Technologies	MOSFET N CH 25V 28A S3		HEXFET®	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	-40°C ~ 150°C (TJ)	Surface Mount	DirectFET™ Isometric S3C	DIRECTFET™ S3C	2.1W (Ta), 42W (Tc)	N-Channel	-	25V	28A (Ta), 125A (Tc)	1.7 mOhm @ 28A, 10V	2.1V @ 50µA	25nC @ 4.5V	2510pF @ 13V	4.5V, 10V	±16V

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