Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF6645
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1,610
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Infineon Technologies MOSFET N-CH 100V DIRECTFET-SJ HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric SJ DIRECTFET™ SJ 3W (Ta), 42W (Tc) N-Channel - 100V 5.7A (Ta), 25A (Tc) 35 mOhm @ 5.7A, 10V 4.9V @ 50µA 20nC @ 10V 890pF @ 25V 10V ±20V
IRF6645TR1PBF
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2,015
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Infineon Technologies MOSFET N-CH 100V 5.7A DIRECTFET HEXFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric SJ DIRECTFET™ SJ 2.2W (Ta), 42W (Tc) N-Channel - 100V 5.7A (Ta), 25A (Tc) 35 mOhm @ 5.7A, 10V 4.9V @ 50µA 20nC @ 10V 890pF @ 25V 10V ±20V
IRF6645TR1PBF
RFQ
VIEW
RFQ
730
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Infineon Technologies MOSFET N-CH 100V 5.7A DIRECTFET HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric SJ DIRECTFET™ SJ 2.2W (Ta), 42W (Tc) N-Channel - 100V 5.7A (Ta), 25A (Tc) 35 mOhm @ 5.7A, 10V 4.9V @ 50µA 20nC @ 10V 890pF @ 25V 10V ±20V
IRF6645TR1PBF
RFQ
VIEW
RFQ
2,228
In-stock
Infineon Technologies MOSFET N-CH 100V 5.7A DIRECTFET HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric SJ DIRECTFET™ SJ 2.2W (Ta), 42W (Tc) N-Channel - 100V 5.7A (Ta), 25A (Tc) 35 mOhm @ 5.7A, 10V 4.9V @ 50µA 20nC @ 10V 890pF @ 25V 10V ±20V
IRF6645TRPBF
RFQ
VIEW
RFQ
1,027
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Infineon Technologies MOSFET N-CH 100V 5.7A DIRECTFET HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric SJ DIRECTFET™ SJ 2.2W (Ta), 42W (Tc) N-Channel - 100V 5.7A (Ta), 25A (Tc) 35 mOhm @ 5.7A, 10V 4.9V @ 50µA 20nC @ 10V 890pF @ 25V 10V ±20V
IRF6645TRPBF
RFQ
VIEW
RFQ
1,227
In-stock
Infineon Technologies MOSFET N-CH 100V 5.7A DIRECTFET HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric SJ DIRECTFET™ SJ 2.2W (Ta), 42W (Tc) N-Channel - 100V 5.7A (Ta), 25A (Tc) 35 mOhm @ 5.7A, 10V 4.9V @ 50µA 20nC @ 10V 890pF @ 25V 10V ±20V
IRF6645TRPBF
RFQ
VIEW
RFQ
1,121
In-stock
Infineon Technologies MOSFET N-CH 100V 5.7A DIRECTFET HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric SJ DIRECTFET™ SJ 2.2W (Ta), 42W (Tc) N-Channel - 100V 5.7A (Ta), 25A (Tc) 35 mOhm @ 5.7A, 10V 4.9V @ 50µA 20nC @ 10V 890pF @ 25V 10V ±20V