Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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EPC2012C
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RFQ
1,808
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EPC TRANS GAN 200V 5A BUMPED DIE eGaN® Active Digi-Reel® GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Die Outline (4-Solder Bar) N-Channel - 200V 5A (Ta) 100 mOhm @ 3A, 5V 2.5V @ 1mA 1.3nC @ 5V 140pF @ 100V 5V +6V, -4V
EPC2012C
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RFQ
1,857
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EPC TRANS GAN 200V 5A BUMPED DIE eGaN® Active Cut Tape (CT) GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Die Outline (4-Solder Bar) N-Channel - 200V 5A (Ta) 100 mOhm @ 3A, 5V 2.5V @ 1mA 1.3nC @ 5V 140pF @ 100V 5V +6V, -4V
EPC2012C
RFQ
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RFQ
2,928
In-stock
EPC TRANS GAN 200V 5A BUMPED DIE eGaN® Active Tape & Reel (TR) GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Die Outline (4-Solder Bar) N-Channel - 200V 5A (Ta) 100 mOhm @ 3A, 5V 2.5V @ 1mA 1.3nC @ 5V 140pF @ 100V 5V +6V, -4V