- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||
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VIEW |
2,871
In-stock
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GeneSiC Semiconductor | TRANS SJT 650V 16A TO276 | - | Obsolete | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276AA | TO-276 | 330W (Tc) | 650V | 16A (Tc) (155°C) | 105 mOhm @ 16A | 1534pF @ 35V | |||
|
VIEW |
2,415
In-stock
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GeneSiC Semiconductor | TRANS SJT 650V 8A TO276 | - | Obsolete | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276AA | TO-276 | 200W (Tc) | 650V | 8A (Tc) (158°C) | 170 mOhm @ 8A | 720pF @ 35V | |||
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VIEW |
3,854
In-stock
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GeneSiC Semiconductor | TRANS SJT 650V 4A TO276 | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276AA | TO-276 | 125W (Tc) | 650V | 4A (Tc) (165°C) | 415 mOhm @ 4A | 324pF @ 35V | |||
