- Manufacture :
- Part Status :
- Operating Temperature :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,289
In-stock
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GeneSiC Semiconductor | TRANS SJT 650V 15A TO-257 | - | Obsolete | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-257-3 | TO-257 | 172W (Tc) | - | 650V | 15A (Tc) (155°C) | 105 mOhm @ 15A | - | - | 1534pF @ 35V | - | - | |||
|
VIEW |
1,976
In-stock
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GeneSiC Semiconductor | TRANS SJT 650V 7A TO-257 | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-257-3 | TO-257 | 80W (Tc) | - | 650V | 7A (Tc) (165°C) | 170 mOhm @ 7A | - | - | 720pF @ 35V | - | - | |||
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|
VIEW |
621
In-stock
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GeneSiC Semiconductor | TRANS SJT 650V 4A TO-257 | - | Obsolete | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-257-3 | TO-257 | 47W (Tc) | - | 650V | 4A (Tc) (165°C) | 415 mOhm @ 4A | - | - | 324pF @ 35V | - | - | |||
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VIEW |
3,518
In-stock
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Microsemi Corporation | N CHANNEL MOSFET TO-257 RAD | Military, MIL-PRF-19500/614 | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-257-3 | TO-257 | 2W (Ta), 75W (Tc) | N-Channel | 200V | 9.4A (Tc) | 490 mOhm @ 9.4A, 12V | 4V @ 1mA | 50nC @ 12V | - | 12V | ±20V | |||
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|
VIEW |
3,201
In-stock
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Microsemi Corporation | N CHANNEL MOSFET TO-257 RAD | Military, MIL-PRF-19500/614 | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-257-3 | TO-257 | 2W (Ta), 75W (Tc) | N-Channel | 100V | 14.4A (Tc) | 200 mOhm @ 14.4A, 12V | 4V @ 1mA | 40nC @ 12V | - | 12V | ±20V | |||
