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- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,386
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 1.9A UFV | U-MOSIII | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD (5 Leads), Flat Lead | UFV | 500mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 1.9A (Ta) | 133 mOhm @ 1A, 4V | 1V @ 1mA | 1.9nC @ 4V | 123pF @ 15V | 1.8V, 4V | ±12V | |||
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VIEW |
1,512
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 1.9A UFV | U-MOSIII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD (5 Leads), Flat Lead | UFV | 500mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 1.9A (Ta) | 133 mOhm @ 1A, 4V | 1V @ 1mA | 1.9nC @ 4V | 123pF @ 15V | 1.8V, 4V | ±12V | |||
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VIEW |
1,083
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 1.9A UFV | U-MOSIII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD (5 Leads), Flat Lead | UFV | 500mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 1.9A (Ta) | 133 mOhm @ 1A, 4V | 1V @ 1mA | 1.9nC @ 4V | 123pF @ 15V | 1.8V, 4V | ±12V | |||
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VIEW |
2,347
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.5A UFV | U-MOSIII | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD (5 Leads), Flat Lead | UFV | 500mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 1.5A (Ta) | 213 mOhm @ 1A, 4V | 1V @ 1mA | 6.4nC @ 4V | 250pF @ 10V | 1.8V, 4V | ±8V | |||
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VIEW |
1,709
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.5A UFV | U-MOSIII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD (5 Leads), Flat Lead | UFV | 500mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 1.5A (Ta) | 213 mOhm @ 1A, 4V | 1V @ 1mA | 6.4nC @ 4V | 250pF @ 10V | 1.8V, 4V | ±8V | |||
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VIEW |
733
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.5A UFV | U-MOSIII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD (5 Leads), Flat Lead | UFV | 500mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 1.5A (Ta) | 213 mOhm @ 1A, 4V | 1V @ 1mA | 6.4nC @ 4V | 250pF @ 10V | 1.8V, 4V | ±8V | |||
