- Manufacture :
- Series :
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- Packaging :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
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11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,706
In-stock
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EPC | TRANS GAN 2N-CH 100V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tray | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | |||
|
VIEW |
2,279
In-stock
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ON Semiconductor | MOSFET 2N-CH 30V 5.5A 8SOIC | PowerTrench® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 900mW | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 5.5A | 40 mOhm @ 5.5A, 10V | 3V @ 250µA | 7nC @ 5V | 460pF @ 15V | |||
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|
VIEW |
3,830
In-stock
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ON Semiconductor | MOSFET 2N-CH 30V 5.5A 8SOIC | PowerTrench® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 900mW | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 5.5A | 40 mOhm @ 5.5A, 10V | 3V @ 250µA | 7nC @ 5V | 460pF @ 15V | |||
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|
VIEW |
3,455
In-stock
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ON Semiconductor | MOSFET 2N-CH 30V 5.5A 8SOIC | PowerTrench® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 900mW | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 5.5A | 40 mOhm @ 5.5A, 10V | 3V @ 250µA | 7nC @ 5V | 460pF @ 15V | |||
|
VIEW |
3,965
In-stock
|
Central Semiconductor Corp | MOSFET 2P-CH 30V 5.3A 8SOIC | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SOIC | 2 P-Channel (Dual) | Standard | 30V | 5.3A | 72 mOhm @ 2.7A, 10V | 3V @ 250µA | 7nC @ 5V | 590pF @ 10V | |||
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|
VIEW |
2,720
In-stock
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EPC | MOSFET 2NCH 100V 23A DIE | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | |||
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|
VIEW |
1,230
In-stock
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EPC | MOSFET 2NCH 100V 23A DIE | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | |||
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|
VIEW |
3,629
In-stock
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EPC | MOSFET 2NCH 100V 23A DIE | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | |||
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|
VIEW |
1,996
In-stock
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EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | |||
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|
VIEW |
3,995
In-stock
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | |||
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|
VIEW |
2,652
In-stock
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EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | |||
