- Operating Temperature :
- Package / Case :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||
|
VIEW |
3,858
In-stock
|
Microsemi Corporation | POWER MODULE - SIC | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | SP6 | 2300W | SP6 | 2 N-Channel (Dual), Schottky | Silicon Carbide (SiC) | 1200V (1.2kV) | 370A (Tc) | 10 mOhm @ 200A, 20V | 3V @ 10mA | 1360nC @ 20V | - | |||
|
VIEW |
1,793
In-stock
|
Microsemi Corporation | MOSFET 2N-CH 1200V 250A D3 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | D-3 Module | 1100W | D3 | 2 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | 250A | 10 mOhm @ 200A, 20V | 2.2V @ 10mA (Typ) | 490nC @ 20V | 9500pF @ 1000V | |||
