Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
GLOBAL STOCKS
EPC2101ENG
RFQ
VIEW
RFQ
1,715
In-stock
EPC TRANS GAN 2N-CH 60V BUMPED DIE eGaN® Discontinued at Digi-Key Tray -40°C ~ 150°C (TJ) Surface Mount Die - 2 N-Channel (Half Bridge) GaNFET (Gallium Nitride) 60V 9.5A, 38A 11.5 mOhm @ 20A, 5V 2.5V @ 2mA 2.7nC @ 5V 300pF @ 30V
EPC2101ENGRT
RFQ
VIEW
RFQ
3,916
In-stock
EPC TRANS GAN ASYMMETRICAL HALF BRID eGaN® Active Digi-Reel® -40°C ~ 150°C (TJ) Surface Mount Die - 2 N-Channel (Half Bridge) GaNFET (Gallium Nitride) 60V 9.5A, 38A 11.5 mOhm @ 20A, 5V 2.5V @ 2mA 2.7nC @ 5V 300pF @ 30V
EPC2101ENGRT
RFQ
VIEW
RFQ
3,514
In-stock
EPC TRANS GAN ASYMMETRICAL HALF BRID eGaN® Active Cut Tape (CT) -40°C ~ 150°C (TJ) Surface Mount Die - 2 N-Channel (Half Bridge) GaNFET (Gallium Nitride) 60V 9.5A, 38A 11.5 mOhm @ 20A, 5V 2.5V @ 2mA 2.7nC @ 5V 300pF @ 30V
EPC2101ENGRT
RFQ
VIEW
RFQ
1,430
In-stock
EPC TRANS GAN ASYMMETRICAL HALF BRID eGaN® Active Tape & Reel (TR) -40°C ~ 150°C (TJ) Surface Mount Die - 2 N-Channel (Half Bridge) GaNFET (Gallium Nitride) 60V 9.5A, 38A 11.5 mOhm @ 20A, 5V 2.5V @ 2mA 2.7nC @ 5V 300pF @ 30V