Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
GLOBAL STOCKS
SSM6N58NU,LF
RFQ
VIEW
RFQ
1,381
In-stock
Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 4A UDFN6 - Active Digi-Reel® 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 1W 6-UDFN (2x2) 2 N-Channel (Dual) Logic Level Gate, 1.8V Drive 30V 4A 84 mOhm @ 2A, 4.5V 1V @ 1mA 1.8nC @ 4.5V 129pF @ 15V
SSM6N58NU,LF
RFQ
VIEW
RFQ
3,645
In-stock
Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 4A UDFN6 - Active Cut Tape (CT) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 1W 6-UDFN (2x2) 2 N-Channel (Dual) Logic Level Gate, 1.8V Drive 30V 4A 84 mOhm @ 2A, 4.5V 1V @ 1mA 1.8nC @ 4.5V 129pF @ 15V
SSM6N58NU,LF
RFQ
VIEW
RFQ
2,111
In-stock
Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 4A UDFN6 - Active Tape & Reel (TR) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 1W 6-UDFN (2x2) 2 N-Channel (Dual) Logic Level Gate, 1.8V Drive 30V 4A 84 mOhm @ 2A, 4.5V 1V @ 1mA 1.8nC @ 4.5V 129pF @ 15V