Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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Toshiba Semiconductor and Storage MOSFET 2N-CH 20V 4A UDFN - Active Digi-Reel® -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 2W 6-UDFNB (2x2) 2 N-Channel (Dual) Logic Level Gate, 1.5V Drive 20V 4A 33 mOhm @ 4A, 4.5V 1V @ 1mA 3.6nC @ 4.5V 410pF @ 10V
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Toshiba Semiconductor and Storage MOSFET 2N-CH 20V 4A UDFN - Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 2W 6-UDFNB (2x2) 2 N-Channel (Dual) Logic Level Gate, 1.5V Drive 20V 4A 33 mOhm @ 4A, 4.5V 1V @ 1mA 3.6nC @ 4.5V 410pF @ 10V
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Toshiba Semiconductor and Storage MOSFET 2N-CH 20V 4A UDFN - Active Tape & Reel (TR) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 2W 6-UDFNB (2x2) 2 N-Channel (Dual) Logic Level Gate, 1.5V Drive 20V 4A 33 mOhm @ 4A, 4.5V 1V @ 1mA 3.6nC @ 4.5V 410pF @ 10V