Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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Vishay Siliconix MOSFET 2N-CH 20V 6A 1212-8 TrenchFET® Active Digi-Reel® -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 Dual 1.5W 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 6A 26 mOhm @ 8.5A, 4.5V 900mV @ 250µA 16nC @ 4.5V -
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Vishay Siliconix MOSFET 2N-CH 20V 6A 1212-8 TrenchFET® Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 Dual 1.5W 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 6A 26 mOhm @ 8.5A, 4.5V 900mV @ 250µA 16nC @ 4.5V -
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Vishay Siliconix MOSFET 2N-CH 20V 6A 1212-8 TrenchFET® Active Tape & Reel (TR) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 Dual 1.5W 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 6A 26 mOhm @ 8.5A, 4.5V 900mV @ 250µA 16nC @ 4.5V -
SI7900AEDN-T1-GE3
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Vishay Siliconix MOSFET 2N-CH 20V 6A PPAK 1212-8 TrenchFET® Active Digi-Reel® -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 Dual 1.5W 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 6A 26 mOhm @ 8.5A, 4.5V 900mV @ 250µA 16nC @ 4.5V -
SI7900AEDN-T1-GE3
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Vishay Siliconix MOSFET 2N-CH 20V 6A PPAK 1212-8 TrenchFET® Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 Dual 1.5W 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 6A 26 mOhm @ 8.5A, 4.5V 900mV @ 250µA 16nC @ 4.5V -
SI7900AEDN-T1-GE3
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1,681
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Vishay Siliconix MOSFET 2N-CH 20V 6A PPAK 1212-8 TrenchFET® Active Tape & Reel (TR) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 Dual 1.5W 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 6A 26 mOhm @ 8.5A, 4.5V 900mV @ 250µA 16nC @ 4.5V -