Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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Infineon Technologies MOSFET 2N-CH 60V 8A 8-SOIC HEXFET® Active Digi-Reel® -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 N-Channel (Dual) Logic Level Gate 60V 8A 17.8 mOhm @ 8A, 10V 4V @ 50µA 36nC @ 10V 1330pF @ 30V
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Infineon Technologies MOSFET 2N-CH 60V 8A 8-SOIC HEXFET® Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 N-Channel (Dual) Logic Level Gate 60V 8A 17.8 mOhm @ 8A, 10V 4V @ 50µA 36nC @ 10V 1330pF @ 30V
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Infineon Technologies MOSFET 2N-CH 60V 8A 8-SOIC HEXFET® Active Tape & Reel (TR) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 N-Channel (Dual) Logic Level Gate 60V 8A 17.8 mOhm @ 8A, 10V 4V @ 50µA 36nC @ 10V 1330pF @ 30V
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Infineon Technologies MOSFET 2N-CH 60V 8A 8-SOIC HEXFET® Not For New Designs Tube -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 N-Channel (Dual) Logic Level Gate 60V 8A 17.8 mOhm @ 8A, 10V 4V @ 50µA 36nC @ 10V 1330pF @ 30V