Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 4A UDFN6 - Active Tape & Reel (TR) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 1W 6-µDFN(2x2) 2 N-Channel (Dual) Standard 30V 4A 46 mOhm @ 2A, 4.5V 1V @ 1mA 4nC @ 4.5V 310pF @ 10V
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Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 4A UDFN6 - Active Digi-Reel® 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 1W 6-µDFN(2x2) 2 N-Channel (Dual) Standard 30V 4A 46 mOhm @ 2A, 4.5V 1V @ 1mA 4nC @ 4.5V 310pF @ 10V
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Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 4A UDFN6 - Active Cut Tape (CT) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 1W 6-µDFN(2x2) 2 N-Channel (Dual) Standard 30V 4A 46 mOhm @ 2A, 4.5V 1V @ 1mA 4nC @ 4.5V 310pF @ 10V