Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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IRF7506TR
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3,674
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Infineon Technologies MOSFET 2P-CH 30V 1.7A MICRO8 HEXFET® Obsolete Digi-Reel® -55°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 1.25W Micro8™ 2 P-Channel (Dual) Logic Level Gate 30V 1.7A 270 mOhm @ 1.2A, 10V 1V @ 250µA 11nC @ 10V 180pF @ 25V
IRF7506TR
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1,090
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Infineon Technologies MOSFET 2P-CH 30V 1.7A MICRO8 HEXFET® Obsolete Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 1.25W Micro8™ 2 P-Channel (Dual) Logic Level Gate 30V 1.7A 270 mOhm @ 1.2A, 10V 1V @ 250µA 11nC @ 10V 180pF @ 25V
IRF7504TR
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3,437
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Infineon Technologies MOSFET 2P-CH 20V 1.7A MICRO8 HEXFET® Obsolete Digi-Reel® -55°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 1.25W Micro8™ 2 P-Channel (Dual) Logic Level Gate 20V 1.7A 270 mOhm @ 1.2A, 4.5V 700mV @ 250µA 8.2nC @ 4.5V 240pF @ 15V
IRF7504TR
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1,360
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Infineon Technologies MOSFET 2P-CH 20V 1.7A MICRO8 HEXFET® Obsolete Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 1.25W Micro8™ 2 P-Channel (Dual) Logic Level Gate 20V 1.7A 270 mOhm @ 1.2A, 4.5V 700mV @ 250µA 8.2nC @ 4.5V 240pF @ 15V
IRF7504TR
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2,560
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Infineon Technologies MOSFET 2P-CH 20V 1.7A MICRO8 HEXFET® Obsolete Tape & Reel (TR) -55°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 1.25W Micro8™ 2 P-Channel (Dual) Logic Level Gate 20V 1.7A 270 mOhm @ 1.2A, 4.5V 700mV @ 250µA 8.2nC @ 4.5V 240pF @ 15V
ZXMN2088DE6TA
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2,506
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Diodes Incorporated MOSFET 2N-CH 20V 1.7A SOT-26 - Active Tape & Reel (TR) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 1.1W SOT-23-6 2 N-Channel (Dual) Logic Level Gate 20V 1.7A 200 mOhm @ 1A, 4.5V 1V @ 250µA 3.8nC @ 4.5V 279pF @ 10V
IRF7506TRPBF
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2,684
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Infineon Technologies MOSFET 2P-CH 30V 1.7A MICRO8 HEXFET® Active Digi-Reel® -55°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 1.25W Micro8™ 2 P-Channel (Dual) Logic Level Gate 30V 1.7A 270 mOhm @ 1.2A, 10V 1V @ 250µA 11nC @ 10V 180pF @ 25V
IRF7506TRPBF
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RFQ
2,635
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Infineon Technologies MOSFET 2P-CH 30V 1.7A MICRO8 HEXFET® Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 1.25W Micro8™ 2 P-Channel (Dual) Logic Level Gate 30V 1.7A 270 mOhm @ 1.2A, 10V 1V @ 250µA 11nC @ 10V 180pF @ 25V
IRF7506TRPBF
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1,892
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Infineon Technologies MOSFET 2P-CH 30V 1.7A MICRO8 HEXFET® Active Tape & Reel (TR) -55°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 1.25W Micro8™ 2 P-Channel (Dual) Logic Level Gate 30V 1.7A 270 mOhm @ 1.2A, 10V 1V @ 250µA 11nC @ 10V 180pF @ 25V
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RFQ
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793
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EPC TRANS GAN SYM 100V BUMPED DIE eGaN® Active Digi-Reel® -40°C ~ 150°C (TJ) Surface Mount Die - Die 2 N-Channel (Half Bridge) GaNFET (Gallium Nitride) 100V 1.7A 70 mOhm @ 2A, 5V 2.5V @ 600µA 0.73nC @ 5V 75pF @ 50V
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RFQ
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RFQ
2,869
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EPC TRANS GAN SYM 100V BUMPED DIE eGaN® Active Cut Tape (CT) -40°C ~ 150°C (TJ) Surface Mount Die - Die 2 N-Channel (Half Bridge) GaNFET (Gallium Nitride) 100V 1.7A 70 mOhm @ 2A, 5V 2.5V @ 600µA 0.73nC @ 5V 75pF @ 50V
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3,465
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EPC TRANS GAN SYM 100V BUMPED DIE eGaN® Active Tape & Reel (TR) -40°C ~ 150°C (TJ) Surface Mount Die - Die 2 N-Channel (Half Bridge) GaNFET (Gallium Nitride) 100V 1.7A 70 mOhm @ 2A, 5V 2.5V @ 600µA 0.73nC @ 5V 75pF @ 50V
EPC2106ENGRT
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3,910
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EPC TRANS GAN 2N-CH 100V BUMPED DIE eGaN® Active Digi-Reel® -40°C ~ 150°C (TJ) Surface Mount Die - Die 2 N-Channel (Half Bridge) GaNFET (Gallium Nitride) 100V 1.7A 70 mOhm @ 2A, 5V 2.5V @ 600µA 0.73nC @ 5V 75pF @ 50V
EPC2106ENGRT
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3,215
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EPC TRANS GAN 2N-CH 100V BUMPED DIE eGaN® Active Cut Tape (CT) -40°C ~ 150°C (TJ) Surface Mount Die - Die 2 N-Channel (Half Bridge) GaNFET (Gallium Nitride) 100V 1.7A 70 mOhm @ 2A, 5V 2.5V @ 600µA 0.73nC @ 5V 75pF @ 50V
EPC2106ENGRT
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2,675
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EPC TRANS GAN 2N-CH 100V BUMPED DIE eGaN® Active Tape & Reel (TR) -40°C ~ 150°C (TJ) Surface Mount Die - Die 2 N-Channel (Half Bridge) GaNFET (Gallium Nitride) 100V 1.7A 70 mOhm @ 2A, 5V 2.5V @ 600µA 0.73nC @ 5V 75pF @ 50V
IRF7504TRPBF
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RFQ
2,007
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Infineon Technologies MOSFET 2P-CH 20V 1.7A MICRO8 HEXFET® Active Digi-Reel® -55°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 1.25W Micro8™ 2 P-Channel (Dual) Logic Level Gate 20V 1.7A 270 mOhm @ 1.2A, 4.5V 700mV @ 250µA 8.2nC @ 4.5V 240pF @ 15V
IRF7504TRPBF
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RFQ
2,374
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Infineon Technologies MOSFET 2P-CH 20V 1.7A MICRO8 HEXFET® Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 1.25W Micro8™ 2 P-Channel (Dual) Logic Level Gate 20V 1.7A 270 mOhm @ 1.2A, 4.5V 700mV @ 250µA 8.2nC @ 4.5V 240pF @ 15V
IRF7504TRPBF
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RFQ
895
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Infineon Technologies MOSFET 2P-CH 20V 1.7A MICRO8 HEXFET® Active Tape & Reel (TR) -55°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 1.25W Micro8™ 2 P-Channel (Dual) Logic Level Gate 20V 1.7A 270 mOhm @ 1.2A, 4.5V 700mV @ 250µA 8.2nC @ 4.5V 240pF @ 15V