- Manufacture :
- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Package / Case :
- FET Feature :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
18 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||
|
VIEW |
3,706
In-stock
|
EPC | TRANS GAN 2N-CH 100V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tray | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | |||
|
|
VIEW |
1,875
In-stock
|
EPC | TRANS GAN 2N-CH 80V BUMPED DIE | eGaN® | Active | Tray | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 23A | 5.5 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V | |||
|
|
VIEW |
2,191
In-stock
|
EPC | TRANS GAN 2N-CH 60V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tray | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A | 4.4 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | |||
|
VIEW |
2,859
In-stock
|
ON Semiconductor | MOSFET 2N-CH 40V 23A | PowerTrench® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 12-PowerWDFN | 2.1W | 12-Power3.3x5 | 2 N-Channel (Dual) | Standard | 40V | 23A | 2.6 mOhm @ 23A, 10V | 3V @ 250µA | 56nC @ 10V | 4230pF @ 20V | |||
|
|
VIEW |
1,309
In-stock
|
ON Semiconductor | MOSFET 2N-CH 40V 23A | PowerTrench® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 12-PowerWDFN | 2.1W | 12-Power3.3x5 | 2 N-Channel (Dual) | Standard | 40V | 23A | 2.6 mOhm @ 23A, 10V | 3V @ 250µA | 56nC @ 10V | 4230pF @ 20V | |||
|
|
VIEW |
3,296
In-stock
|
ON Semiconductor | MOSFET 2N-CH 40V 23A | PowerTrench® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 12-PowerWDFN | 2.1W | 12-Power3.3x5 | 2 N-Channel (Dual) | Standard | 40V | 23A | 2.6 mOhm @ 23A, 10V | 3V @ 250µA | 56nC @ 10V | 4230pF @ 20V | |||
|
|
VIEW |
2,720
In-stock
|
EPC | MOSFET 2NCH 100V 23A DIE | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | |||
|
|
VIEW |
1,230
In-stock
|
EPC | MOSFET 2NCH 100V 23A DIE | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | |||
|
|
VIEW |
3,629
In-stock
|
EPC | MOSFET 2NCH 100V 23A DIE | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | |||
|
|
VIEW |
1,996
In-stock
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | |||
|
|
VIEW |
3,995
In-stock
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | |||
|
|
VIEW |
2,652
In-stock
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | |||
|
|
VIEW |
2,971
In-stock
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A | 4.4 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | |||
|
|
VIEW |
688
In-stock
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A | 4.4 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | |||
|
|
VIEW |
1,780
In-stock
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A | 4.4 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | |||
|
|
VIEW |
3,563
In-stock
|
EPC | TRANS GAN SYM HALF BRDG 80V | eGaN® | Active | Digi-Reel® | - | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 23A | 5.5 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 7600pF @ 40V | |||
|
|
VIEW |
3,186
In-stock
|
EPC | TRANS GAN SYM HALF BRDG 80V | eGaN® | Active | Cut Tape (CT) | - | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 23A | 5.5 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 7600pF @ 40V | |||
|
|
VIEW |
1,479
In-stock
|
EPC | TRANS GAN SYM HALF BRDG 80V | eGaN® | Active | Tape & Reel (TR) | - | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 23A | 5.5 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 7600pF @ 40V | |||
