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- Drain to Source Voltage (Vdss) :
- Rds On (Max) @ Id, Vgs :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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VIEW |
1,135
In-stock
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Microsemi Corporation | MOSFET 6N-CH 75V 120A SP6-P | - | Obsolete | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | 138W | SP6-P | 6 N-Channel (3-Phase Bridge) | Standard | 75V | 120A | 4.5 mOhm @ 60A, 10V | 4V @ 1mA | 153nC @ 10V | 4530pF @ 25V | |||
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VIEW |
2,978
In-stock
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Microsemi Corporation | MOSFET 6N-CH 75V 120A SP6-P | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | 138W | SP6-P | 6 N-Channel (3-Phase Bridge) | Standard | 75V | 120A | 4.5 mOhm @ 60A, 10V | 4V @ 1mA | 153nC @ 10V | 4530pF @ 25V | |||
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VIEW |
2,056
In-stock
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IXYS | MOSFET 2N-CH 75V 120A I4-PAC-5 | HiPerFET™, TrenchT2™ | Active | Tube | -55°C ~ 175°C (TJ) | Through Hole | i4-Pac™-5 | 170W | ISOPLUS i4-PAC™ | 2 N-Channel (Dual) Asymmetrical | Standard | 75V | 120A | 5.8 mOhm @ 100A, 10V | 4V @ 250µA | 178nC @ 10V | 10500pF @ 25V | |||
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VIEW |
2,240
In-stock
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Rohm Semiconductor | MOSFET 2N-CH 1200V 120A MODULE | - | Active | Bulk | -40°C ~ 150°C (TJ) | - | Module | 780W | Module | 2 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | 120A | - | 2.7V @ 22mA | - | 14000pF @ 10V | |||
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VIEW |
2,604
In-stock
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IXYS | MOSFET 2N-CH 75V 120A I5-PAK | TrenchMV™ | Obsolete | Tube | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUSi5-Pak™ | 150W | ISOPLUSi5-Pak™ | 2 N-Channel (Dual) | Standard | 75V | 120A | 5.5 mOhm @ 50A, 10V | 4V @ 250µA | 165nC @ 10V | 7700pF @ 25V | |||
