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  4. Transistors - Bipolar (BJT) - RF
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15 results
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Frequency - Transition Noise Figure (dB Typ @ f) Gain
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MT3S111P(TE12L,F)
RFQ
VIEW
RFQ
1,122
In-stock
 Toshiba Semiconductor and Storage RF SIGE HETEROJUNCTION BIPOLAR N - Active Digi-Reel® 150°C (TJ) Surface Mount TO-243AA 1W PW-MINI NPN 100mA 6V 200 @ 30mA, 5V 8GHz 1.25dB @ 1GHz 10.5dB
Default Photo
MT3S111P(TE12L,F)
RFQ
VIEW
RFQ
3,258
In-stock
 Toshiba Semiconductor and Storage RF SIGE HETEROJUNCTION BIPOLAR N - Active Cut Tape (CT) 150°C (TJ) Surface Mount TO-243AA 1W PW-MINI NPN 100mA 6V 200 @ 30mA, 5V 8GHz 1.25dB @ 1GHz 10.5dB
Default Photo
MT3S111P(TE12L,F)
RFQ
VIEW
RFQ
1,281
In-stock
 Toshiba Semiconductor and Storage RF SIGE HETEROJUNCTION BIPOLAR N - Active Tape & Reel (TR) 150°C (TJ) Surface Mount TO-243AA 1W PW-MINI NPN 100mA 6V 200 @ 30mA, 5V 8GHz 1.25dB @ 1GHz 10.5dB
Default Photo
MT3S113P(TE12L,F)
RFQ
VIEW
RFQ
808
In-stock
 Toshiba Semiconductor and Storage RF SIGE HETEROJUNCTION BIPOLAR N - Active Digi-Reel® 150°C (TJ) Surface Mount TO-243AA 1.6W PW-MINI NPN 100mA 5.3V 200 @ 30mA, 5V 7.7GHz 1.45dB @ 1GHz 10.5dB
Default Photo
MT3S113P(TE12L,F)
RFQ
VIEW
RFQ
1,861
In-stock
 Toshiba Semiconductor and Storage RF SIGE HETEROJUNCTION BIPOLAR N - Active Cut Tape (CT) 150°C (TJ) Surface Mount TO-243AA 1.6W PW-MINI NPN 100mA 5.3V 200 @ 30mA, 5V 7.7GHz 1.45dB @ 1GHz 10.5dB
Default Photo
MT3S113P(TE12L,F)
RFQ
VIEW
RFQ
889
In-stock
 Toshiba Semiconductor and Storage RF SIGE HETEROJUNCTION BIPOLAR N - Active Tape & Reel (TR) 150°C (TJ) Surface Mount TO-243AA 1.6W PW-MINI NPN 100mA 5.3V 200 @ 30mA, 5V 7.7GHz 1.45dB @ 1GHz 10.5dB
MT3S113(TE85L,F)
MT3S113(TE85L,F)
RFQ
VIEW
RFQ
2,098
In-stock
 Toshiba Semiconductor and Storage RF SIGE HETEROJUNCTION BIPOLAR N - Active Digi-Reel® 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 800mW S-Mini NPN 100mA 5.3V 200 @ 30mA, 5V 12.5GHz 1.45dB @ 1GHz 11.8dB
MT3S113(TE85L,F)
MT3S113(TE85L,F)
RFQ
VIEW
RFQ
2,542
In-stock
 Toshiba Semiconductor and Storage RF SIGE HETEROJUNCTION BIPOLAR N - Active Cut Tape (CT) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 800mW S-Mini NPN 100mA 5.3V 200 @ 30mA, 5V 12.5GHz 1.45dB @ 1GHz 11.8dB
MT3S113(TE85L,F)
MT3S113(TE85L,F)
RFQ
VIEW
RFQ
1,893
In-stock
 Toshiba Semiconductor and Storage RF SIGE HETEROJUNCTION BIPOLAR N - Active Tape & Reel (TR) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 800mW S-Mini NPN 100mA 5.3V 200 @ 30mA, 5V 12.5GHz 1.45dB @ 1GHz 11.8dB
Default Photo
MT3S113TU,LF
RFQ
VIEW
RFQ
1,159
In-stock
 Toshiba Semiconductor and Storage RF SIGE HETEROJUNCTION BIPOLAR N - Active Digi-Reel® 150°C (TJ) Surface Mount 3-SMD, Flat Leads 900mW UFM NPN 100mA 5.3V 200 @ 30mA, 5V 11.2GHz 1.45dB @ 1GHz 12.5dB
Default Photo
MT3S113TU,LF
RFQ
VIEW
RFQ
1,094
In-stock
 Toshiba Semiconductor and Storage RF SIGE HETEROJUNCTION BIPOLAR N - Active Cut Tape (CT) 150°C (TJ) Surface Mount 3-SMD, Flat Leads 900mW UFM NPN 100mA 5.3V 200 @ 30mA, 5V 11.2GHz 1.45dB @ 1GHz 12.5dB
Default Photo
MT3S113TU,LF
RFQ
VIEW
RFQ
778
In-stock
 Toshiba Semiconductor and Storage RF SIGE HETEROJUNCTION BIPOLAR N - Active Tape & Reel (TR) 150°C (TJ) Surface Mount 3-SMD, Flat Leads 900mW UFM NPN 100mA 5.3V 200 @ 30mA, 5V 11.2GHz 1.45dB @ 1GHz 12.5dB
MT3S111(TE85L,F)
MT3S111(TE85L,F)
RFQ
VIEW
RFQ
1,589
In-stock
 Toshiba Semiconductor and Storage RF SIGE HETEROJUNCTION BIPOLAR N - Active Digi-Reel® 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 700mW S-Mini NPN 100mA 6V 200 @ 30mA, 5V 11.5GHz 1.2dB @ 1GHz 12dB
MT3S111(TE85L,F)
MT3S111(TE85L,F)
RFQ
VIEW
RFQ
1,605
In-stock
 Toshiba Semiconductor and Storage RF SIGE HETEROJUNCTION BIPOLAR N - Active Cut Tape (CT) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 700mW S-Mini NPN 100mA 6V 200 @ 30mA, 5V 11.5GHz 1.2dB @ 1GHz 12dB
MT3S111(TE85L,F)
MT3S111(TE85L,F)
RFQ
VIEW
RFQ
1,973
In-stock
 Toshiba Semiconductor and Storage RF SIGE HETEROJUNCTION BIPOLAR N - Active Tape & Reel (TR) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 700mW S-Mini NPN 100mA 6V 200 @ 30mA, 5V 11.5GHz 1.2dB @ 1GHz 12dB
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