Current - Reverse Leakage @ Vr :
Voltage - DC Reverse (Vr) (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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ES07D-GS08
RFQ
VIEW
RFQ
930
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 1.2A DO219AB - Active Digi-Reel® Surface Mount DO-219AB DO-219AB (SMF) Standard 1.2A 980mV @ 1A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 25ns -55°C ~ 150°C 4pF @ 4V, 50MHz
ES07D-GS08
RFQ
VIEW
RFQ
2,248
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 1.2A DO219AB - Active Cut Tape (CT) Surface Mount DO-219AB DO-219AB (SMF) Standard 1.2A 980mV @ 1A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 25ns -55°C ~ 150°C 4pF @ 4V, 50MHz
ES07D-GS08
RFQ
VIEW
RFQ
2,595
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 1.2A DO219AB - Active Tape & Reel (TR) Surface Mount DO-219AB DO-219AB (SMF) Standard 1.2A 980mV @ 1A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 25ns -55°C ~ 150°C 4pF @ 4V, 50MHz
ES07B-GS18
RFQ
VIEW
RFQ
2,873
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 1.2A DO219AB - Active Digi-Reel® Surface Mount DO-219AB DO-219AB (SMF) Standard 1.2A 980mV @ 1A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 25ns -55°C ~ 150°C 4pF @ 4V, 50MHz
ES07B-GS18
RFQ
VIEW
RFQ
2,882
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 1.2A DO219AB - Active Cut Tape (CT) Surface Mount DO-219AB DO-219AB (SMF) Standard 1.2A 980mV @ 1A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 25ns -55°C ~ 150°C 4pF @ 4V, 50MHz
ES07B-GS18
RFQ
VIEW
RFQ
3,646
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 1.2A DO219AB - Active Tape & Reel (TR) Surface Mount DO-219AB DO-219AB (SMF) Standard 1.2A 980mV @ 1A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 25ns -55°C ~ 150°C 4pF @ 4V, 50MHz