Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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RFQ
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RFQ
1,945
In-stock
Infineon Technologies DIODE GEN PURP 1.2KV 10A WAFER - Discontinued at Digi-Key Bulk Surface Mount Die Sawn on foil Standard 10A (DC) 1.6V @ 10A 27µA @ 1200V 1200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C -
1N8028-GA
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RFQ
2,880
In-stock
GeneSiC Semiconductor DIODE SCHOTTKY 1.2KV 9.4A TO257 - Active Tube Through Hole TO-257-3 TO-257 Silicon Carbide Schottky 9.4A (DC) 1.6V @ 10A 20µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 250°C 884pF @ 1V, 1MHz
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RFQ
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RFQ
3,216
In-stock
ON Semiconductor DIODE GEN PURP 10A TO220FI - Obsolete Tube Through Hole TO-220-2 Full Pack TO-220FI(LS)-SB Standard 10A 1.6V @ 10A 100µA @ 600V - Fast Recovery = 200mA (Io) 50ns 150°C (Max) -
FFPF10F150STU
RFQ
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RFQ
2,027
In-stock
ON Semiconductor DIODE GEN PURP 1.5KV 10A TO220F - Active Tube Through Hole TO-220-2 Full Pack TO-220F-2L Standard 10A 1.6V @ 10A 10µA @ 1500V 1500V Fast Recovery = 200mA (Io) 170ns -65°C ~ 150°C -
SCS210KGC
RFQ
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RFQ
3,666
In-stock
Rohm Semiconductor DIODE SCHOTTKY 1.2KV 10A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 10A (DC) 1.6V @ 10A 200µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 550pF @ 1V, 1MHz
SCS210KGHRC
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RFQ
1,893
In-stock
Rohm Semiconductor DIODE SCHOTTKY 1200V 10A TO220-2 Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 10A (DC) 1.6V @ 10A 200µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 550pF @ 1V, 1MHz