Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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APT30DQ60KG
RFQ
VIEW
RFQ
3,309
In-stock
Microsemi Corporation DIODE GEN PURP 600V 30A TO220 - Active Tube Through Hole TO-220-2 TO-220 [K] Standard 30A 2.4V @ 30A 25µA @ 600V 600V Fast Recovery = 200mA (Io) 30ns -55°C ~ 175°C -
ISL9R3060G2-F085
RFQ
VIEW
RFQ
1,147
In-stock
ON Semiconductor DIODE GEN PURP 600V 30A TO247-2 Automotive, AEC-Q101, Stealth™ Active Tube Through Hole TO-247-2 TO-247-2 Standard 30A 2.4V @ 30A 100µA @ 600V 600V Fast Recovery = 200mA (Io) 45ns -55°C ~ 175°C -
STTH30ACS06W
RFQ
VIEW
RFQ
1,415
In-stock
STMicroelectronics DIODE GEN PURP 600V 30A TO247-2 - Active Tube Through Hole TO-247-2 TO-247-2 Standard 30A 2.4V @ 30A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 55ns 175°C (Max) -
APT30DQ60BG
RFQ
VIEW
RFQ
2,141
In-stock
Microsemi Corporation DIODE GEN PURP 600V 30A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 30A 2.4V @ 30A 25µA @ 600V 600V Fast Recovery = 200mA (Io) 30ns -55°C ~ 175°C -
ISL9R3060G2
RFQ
VIEW
RFQ
2,466
In-stock
ON Semiconductor DIODE GEN PURP 600V 30A TO247 Stealth™ Active Tube Through Hole TO-247-2 TO-247-2 Standard 30A 2.4V @ 30A 100µA @ 600V 600V Fast Recovery = 200mA (Io) 45ns -55°C ~ 175°C -
ISL9R3060P2
RFQ
VIEW
RFQ
3,302
In-stock
ON Semiconductor DIODE GEN PURP 600V 30A TO220AC Stealth™ Active Tube Through Hole TO-220-2 TO-220AC Standard 30A 2.4V @ 30A 100µA @ 600V 600V Fast Recovery = 200mA (Io) 45ns -55°C ~ 175°C -