Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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RFQ
2,843
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Taiwan Semiconductor Corporation DIODE GEN PURP 300V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 300V 300V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
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RFQ
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RFQ
1,083
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
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RFQ
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RFQ
2,881
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
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RFQ
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RFQ
2,718
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
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RFQ
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RFQ
1,260
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 6A R-6 - Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 300V 300V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
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RFQ
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RFQ
731
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A R-6 - Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
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RFQ
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RFQ
1,559
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 6A R-6 - Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
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RFQ
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RFQ
1,855
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A R-6 - Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
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RFQ
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RFQ
2,609
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 6A R-6 - Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 300V 300V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
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RFQ
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RFQ
3,105
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A R-6 - Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
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RFQ
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RFQ
3,399
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 6A R-6 - Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
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RFQ
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RFQ
1,139
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A R-6 - Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
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RFQ
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RFQ
1,617
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 6A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 1000V 1000V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
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RFQ
1,598
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 6A R-6 Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 1000V 1000V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
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RFQ
1,529
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 6A R-6 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 1000V 1000V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
60S8-TP
RFQ
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RFQ
2,792
In-stock
Micro Commercial Co DIODE GEN PURP 800V 6A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 6A 1V @ 6A 5µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C -
60S4-TP
RFQ
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RFQ
1,886
In-stock
Micro Commercial Co DIODE GEN PURP 400V 6A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 6A 1V @ 6A 5µA @ 400V 400V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C -
60S2-TP
RFQ
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RFQ
3,073
In-stock
Micro Commercial Co DIODE GEN PURP 200V 6A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 6A 1V @ 6A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C -
60S05-TP
RFQ
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RFQ
1,522
In-stock
Micro Commercial Co DIODE GEN PURP 50V 6A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 6A 1V @ 6A 5µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C -
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RFQ
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RFQ
3,481
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 1000V 1000V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
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RFQ
2,805
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 6A R-6 - Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 1000V 1000V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
VIEW
RFQ
2,121
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 6A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
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RFQ
663
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 6A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
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RFQ
1,327
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 6A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 400V 400V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
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RFQ
629
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
VIEW
RFQ
884
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 6A R-6 Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
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RFQ
2,183
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 6A R-6 Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
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RFQ
1,666
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 6A R-6 Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 400V 400V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
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RFQ
1,407
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A R-6 Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
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RFQ
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RFQ
3,127
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 6A R-6 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz