Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
GLOBAL STOCKS
HER601-TP
RFQ
VIEW
RFQ
625
In-stock
Micro Commercial Co DIODE GEN PURP 50V 6A R6 - Obsolete Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1.1V @ 6A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 50ns -65°C ~ 150°C -
HER603-TP
RFQ
VIEW
RFQ
649
In-stock
Micro Commercial Co DIODE GEN PURP 200V 6A R6 - Obsolete Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1.1V @ 6A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -65°C ~ 150°C -
Default Photo
RFQ
VIEW
RFQ
837
In-stock
GeneSiC Semiconductor DIODE GEN PURP REV 600V 6A DO4 - Active Bulk Chassis, Stud Mount DO-203AA, DO-4, Stud DO-4 Standard, Reverse Polarity 6A 1.1V @ 6A 10µA @ 100V 600V Standard Recovery >500ns, > 200mA (Io) - -65°C ~ 175°C -
Default Photo
S6G
RFQ
VIEW
RFQ
2,719
In-stock
GeneSiC Semiconductor DIODE GEN PURP 400V 6A DO4 - Active Bulk Chassis, Stud Mount DO-203AA, DO-4, Stud DO-4 Standard 6A 1.1V @ 6A 10µA @ 100V 400V Standard Recovery >500ns, > 200mA (Io) - -65°C ~ 175°C -
Default Photo
S6D
RFQ
VIEW
RFQ
3,438
In-stock
GeneSiC Semiconductor DIODE GEN PURP 200V 6A DO4 - Active Bulk Chassis, Stud Mount DO-203AA, DO-4, Stud DO-4 Standard 6A 1.1V @ 6A 10µA @ 100V 200V Standard Recovery >500ns, > 200mA (Io) - -65°C ~ 175°C -
S6QR
RFQ
VIEW
RFQ
959
In-stock
GeneSiC Semiconductor DIODE GEN PURP REV 1.2KV 6A DO4 - Active Bulk Chassis, Stud Mount DO-203AA, DO-4, Stud DO-4 Standard, Reverse Polarity 6A 1.1V @ 6A 10µA @ 100V 1200V Standard Recovery >500ns, > 200mA (Io) - -65°C ~ 175°C -
Default Photo
RFQ
VIEW
RFQ
1,509
In-stock
GeneSiC Semiconductor DIODE GEN PURP REV 800V 6A DO4 - Active Bulk Chassis, Stud Mount DO-203AA, DO-4, Stud DO-4 Standard, Reverse Polarity 6A 1.1V @ 6A 10µA @ 100V 800V Standard Recovery >500ns, > 200mA (Io) - -65°C ~ 175°C -
Default Photo
S6K
RFQ
VIEW
RFQ
2,568
In-stock
GeneSiC Semiconductor DIODE GEN PURP 800V 6A DO4 - Active Bulk Chassis, Stud Mount DO-203AA, DO-4, Stud DO-4 Standard 6A 1.1V @ 6A 10µA @ 100V 800V Standard Recovery >500ns, > 200mA (Io) - -65°C ~ 175°C -
Default Photo
RFQ
VIEW
RFQ
2,738
In-stock
GeneSiC Semiconductor DIODE GEN PURP REV 400V 6A DO4 - Active Bulk Chassis, Stud Mount DO-203AA, DO-4, Stud DO-4 Standard, Reverse Polarity 6A 1.1V @ 6A 10µA @ 100V 400V Standard Recovery >500ns, > 200mA (Io) - -65°C ~ 175°C -
Default Photo
RFQ
VIEW
RFQ
739
In-stock
GeneSiC Semiconductor DIODE GEN PURP REV 200V 6A DO4 - Active Bulk Chassis, Stud Mount DO-203AA, DO-4, Stud DO-4 Standard, Reverse Polarity 6A 1.1V @ 6A 10µA @ 100V 200V Standard Recovery >500ns, > 200mA (Io) - -65°C ~ 175°C -
Default Photo
S6J
RFQ
VIEW
RFQ
2,028
In-stock
GeneSiC Semiconductor DIODE GEN PURP 600V 6A DO4 - Active Bulk Chassis, Stud Mount DO-203AA, DO-4, Stud DO-4 Standard 6A 1.1V @ 6A 10µA @ 100V 600V Standard Recovery >500ns, > 200mA (Io) - -65°C ~ 175°C -
GPP60G-E3/73
RFQ
VIEW
RFQ
2,514
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 6A P600 - Last Time Buy Tape & Box (TB) Through Hole P600, Axial P600 Standard 6A 1.1V @ 6A 5µA @ 400V 400V Standard Recovery >500ns, > 200mA (Io) 5.5µs -55°C ~ 175°C -
GPP60D-E3/73
RFQ
VIEW
RFQ
3,633
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 6A P600 - Last Time Buy Tape & Box (TB) Through Hole P600, Axial P600 Standard 6A 1.1V @ 6A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 5.5µs -55°C ~ 175°C -
GPP60B-E3/73
RFQ
VIEW
RFQ
3,051
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 6A P600 - Last Time Buy Tape & Box (TB) Through Hole P600, Axial P600 Standard 6A 1.1V @ 6A 5µA @ 100V 100V Standard Recovery >500ns, > 200mA (Io) 5.5µs -55°C ~ 175°C -
GPP60A-E3/73
RFQ
VIEW
RFQ
1,199
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 6A P600 - Last Time Buy Tape & Box (TB) Through Hole P600, Axial P600 Standard 6A 1.1V @ 6A 5µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) 5.5µs -55°C ~ 175°C -
GPP60G-E3/54
RFQ
VIEW
RFQ
3,202
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 6A P600 - Last Time Buy Tape & Reel (TR) Through Hole P600, Axial P600 Standard 6A 1.1V @ 6A 5µA @ 400V 400V Standard Recovery >500ns, > 200mA (Io) 5.5µs -55°C ~ 175°C -
GPP60D-E3/54
RFQ
VIEW
RFQ
2,493
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 6A P600 - Last Time Buy Tape & Reel (TR) Through Hole P600, Axial P600 Standard 6A 1.1V @ 6A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 5.5µs -55°C ~ 175°C -
GPP60B-E3/54
RFQ
VIEW
RFQ
645
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 6A P600 - Last Time Buy Tape & Reel (TR) Through Hole P600, Axial P600 Standard 6A 1.1V @ 6A 5µA @ 100V 100V Standard Recovery >500ns, > 200mA (Io) 5.5µs -55°C ~ 175°C -
GPP60A-E3/54
RFQ
VIEW
RFQ
1,817
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 6A P600 - Last Time Buy Tape & Reel (TR) Through Hole P600, Axial P600 Standard 6A 1.1V @ 6A 5µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) 5.5µs -55°C ~ 175°C -
6A04-G
RFQ
VIEW
RFQ
2,827
In-stock
Comchip Technology DIODE GEN PURP 400V 6A R6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1.1V @ 6A 10µA @ 400V 400V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 125°C 100pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,878
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 6A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Standard 6A 1.1V @ 6A 10µA @ 100V 100V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,028
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Standard 6A 1.1V @ 6A 10µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,588
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 6A R-6 Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1.1V @ 6A 10µA @ 100V 100V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
707
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A R-6 Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1.1V @ 6A 10µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
2,079
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 6A R-6 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1.1V @ 6A 10µA @ 100V 100V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,730
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A R-6 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1.1V @ 6A 10µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
3,635
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1.1V @ 6A 10µA @ 100V 100V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,913
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 6A R-6 - Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1.1V @ 6A 10µA @ 100V 100V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
2,930
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 6A R-6 - Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1.1V @ 6A 10µA @ 100V 100V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
3,636
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A R-6 - Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1.1V @ 6A 10µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz