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| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 4.3A TO276 | - | Active | Tube | Surface Mount | TO-276AA | TO-276 | Silicon Carbide Schottky | 4.3A (DC) | 1.65V @ 5A | 5µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 274pF @ 1V, 1MHz | |||
