- Manufacture :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | |
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2,578
In-stock
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Microsemi Corporation | DIODE SILICON 650V 17A TO220 | - | Obsolete | Bulk | Through Hole | TO-220-3 | TO-220 | Silicon Carbide Schottky | 1.8V @ 10A | 200µA @ 650V | 1 Pair Common Cathode | 650V | 17A | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | ||||
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2,768
In-stock
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Infineon Technologies | DIODE SCHOTTKY 1.2KV 10A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 1.65V @ 5A | 40µA @ 1200V | 1 Pair Common Cathode | 1200V | 17A | Fast Recovery = 200mA (Io) | - | -55°C ~ 175°C |