- Package / Case :
- Supplier Device Package :
- Current - Reverse Leakage @ Vr :
- Diode Configuration :
- Current - Average Rectified (Io) (per Diode) :
- Operating Temperature - Junction :
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13 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Speed | Operating Temperature - Junction | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||
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VIEW |
1,795
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 80V 100A TO244AB | - | Active | Bulk | Chassis Mount | TO-244AB | TO-244AB | Schottky | 840mV @ 100A | 1mA @ 80V | 1 Pair Common Anode | 80V | 100A | Fast Recovery = 200mA (Io) | -55°C ~ 150°C | |||
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VIEW |
1,171
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 80V 100A TO244AB | - | Active | Bulk | Chassis Mount | TO-244AB | TO-244AB | Schottky | 840mV @ 100A | 1mA @ 80V | 1 Pair Common Cathode | 80V | 100A | Fast Recovery = 200mA (Io) | -55°C ~ 150°C | |||
|
VIEW |
2,309
In-stock
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GeneSiC Semiconductor | DIODE MODULE 80V 200A 2TOWER | - | Active | Bulk | Chassis Mount | Twin Tower | Twin Tower | Schottky | 840mV @ 100A | 5mA @ 20V | 1 Pair Common Anode | 80V | 200A (DC) | Fast Recovery = 200mA (Io) | - | |||
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VIEW |
1,459
In-stock
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GeneSiC Semiconductor | DIODE MODULE 80V 200A 2TOWER | - | Active | Bulk | Chassis Mount | Twin Tower | Twin Tower | Schottky | 840mV @ 100A | 5mA @ 20V | 1 Pair Common Cathode | 80V | 200A (DC) | Fast Recovery = 200mA (Io) | - | |||
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|
VIEW |
3,604
In-stock
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GeneSiC Semiconductor | DIODE MODULE 100V 200A 2TOWER | - | Active | Bulk | Chassis Mount | Twin Tower | Twin Tower | Schottky | 840mV @ 100A | 5mA @ 20V | 1 Pair Common Anode | 100V | 200A (DC) | Fast Recovery = 200mA (Io) | - | |||
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|
VIEW |
2,355
In-stock
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GeneSiC Semiconductor | DIODE MODULE 100V 200A 2TOWER | - | Active | Bulk | Chassis Mount | Twin Tower | Twin Tower | Schottky | 840mV @ 100A | 5mA @ 20V | 1 Pair Common Cathode | 100V | 200A (DC) | Fast Recovery = 200mA (Io) | - | |||
|
VIEW |
2,494
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 100V 100A SOT227 | - | Active | Bulk | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Schottky | 840mV @ 100A | 1mA @ 100V | 2 Independent | 100V | 100A | Fast Recovery = 200mA (Io) | -40°C ~ 150°C | |||
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|
VIEW |
1,308
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 80V 100A SOT227 | - | Active | Bulk | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Schottky | 840mV @ 100A | 1mA @ 80V | 2 Independent | 80V | 100A | Fast Recovery = 200mA (Io) | -40°C ~ 150°C | |||
|
VIEW |
1,332
In-stock
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Global Power Technologies Group | DIODE SCHOTTKY 100V 100A SOT227 | - | Active | Bulk | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Schottky | 840mV @ 100A | 1mA @ 100V | 2 Independent | 100V | 100A | Fast Recovery = 200mA (Io) | -40°C ~ 150°C | |||
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VIEW |
3,420
In-stock
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Global Power Technologies Group | DIODE SCHOTTKY 80V 100A SOT227 | - | Active | Bulk | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Schottky | 840mV @ 100A | 1mA @ 80V | 2 Independent | 80V | 100A | Fast Recovery = 200mA (Io) | -40°C ~ 150°C | |||
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VIEW |
750
In-stock
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IXYS | DIODE MODULE 80V 110A SOT227B | - | Active | Tube | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | Schottky | 840mV @ 100A | 8mA @ 80V | 2 Independent | 80V | 110A | Fast Recovery = 200mA (Io) | - | |||
|
VIEW |
1,443
In-stock
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GeneSiC Semiconductor | DIODE MODULE 80V 100A TO249AB | - | Active | Bulk | Chassis Mount | TO-249AB | TO-249AB | Schottky | 840mV @ 100A | 2mA @ 20V | 1 Pair Common Cathode | 80V | 100A | Fast Recovery = 200mA (Io) | -55°C ~ 150°C | |||
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VIEW |
1,029
In-stock
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GeneSiC Semiconductor | DIODE MODULE 100V 100A TO249AB | - | Active | Bulk | Chassis Mount | TO-249AB | TO-249AB | Schottky | 840mV @ 100A | 2mA @ 20V | 1 Pair Common Cathode | 100V | 100A | Fast Recovery = 200mA (Io) | - | |||
